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PDF PNZ323B Data sheet ( Hoja de datos )
| Número de pieza | PNZ323B | |
| Descripción | PIN Photodiode | |
| Fabricantes | Panasonic Semiconductor | |
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PIN Photodiodes
PNZ323B
PIN Photodiode
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection : tr, tf = 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes : λP = 970 nm (typ.)
Wide detection area, wide acceptance half angle : θ = 70 deg. (typ.)
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VR
PD
Topr
Tstg
Ratings
30
100
–30 to +85
– 40 to +100
Unit
V
mW
˚C
˚C
4.6±0.2
Chip 2.3
Unit : mm
1.32
2- 0.6±0.1
0.5
2.54
12
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Photo current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Response time
Response time
Capacitance between pins
Acceptance half angle
ID
IL
SIR*2
λP
tr, tf*3
tr, tf*3
Ct
θ
VR = 10V
VR = 10V, L = 1000 lx*1
VR = 5V, H = 0.1mW/cm2
VR = 10V
VR = 10V, RL = 1kΩ
VR = 10V, RL = 100kΩ
VR = 0V, f = 1MHz
Measured from the optical axis to the half power point
3.2
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Light source : λ = 940 nm
*3 Switching time measurement circuit
typ
5
31
4
970
50
5
70
70
max
50
Unit
nA
µA
µA
nm
ns
µs
pF
deg.
λP = 800nm
Sig.IN
50Ω
VR = 10V
(Input pulse)
Sig.OUT
(Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PNZ323B.PDF ] | |
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