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PDF PPNGZ52F120A Data sheet ( Hoja de datos )
| Número de pieza | PPNGZ52F120A | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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PPC INC.
7516 Central Industrial Drive
Riviera Beach, FL 33404
PH: 561-842-0305
Fax: 561-845-7813
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: PPNH(G)Z52F120B
• high frequency IGBT, low switching losses
• anti-parallel FREDiode (PPNHZ52F120A only)
PPNGZ52F120A
PPNHZ52F120A
TO-258
1200 Volts
52 Amps
3.2 Volts vce(sat)
N-CHANNEL
INSULATED GATE BIPOLAR
TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25°C
Tj= 90°C
Peak Collector Current (pulse width limited by Tjmax,)
Tj= 25°C
Tj= 90°C
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH,
RG= 25Ω, Tj= 25°C
Short circuit current (SOA) , VCE≤ 1200V, TJ= 150°C, tsc≤ 10µs
Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, PPNHZ52F120A only)
Pulse Source Current (Body Diode, PPNHZ52F120A only)
Thermal Resistance, Junction to Case
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM(25)
ICM(90)
EAS
IC(sc)
IC(sc)RBSOA
PD
Tj
Tstg
IS
ISM
θJC
MAX.
1200
1200
+/-20
+/-30
52
33
104
66
65
260
66
300
-55 to +150
-55 to +150
50
100
0.42
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
mJ
A
A
Watts
°C
°C
Amps
Amps
°C/W
Datasheet# MSC1376.PDF
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PPNGZ52F120A.PDF ] | |
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