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부품번호 | N74F11D 기능 |
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기능 | Triple 3-input NAND gate | ||
제조업체 | Philips | ||
로고 | |||
전체 8 페이지수
INTEGRATED CIRCUITS
74F10 Triple 3-input NAND gate
74F11 Triple 3-input AND gate
Product specification
IC15 Data Handbook
1989 Sep 20
Philips
Semiconductors
Philips Semiconductors
Gates
Product specification
74F10, 74F11
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limit set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free-air temperature range.)
SYMBOL
PARAMETER
VCC
VIN
IIN
VOUT
IOUT
Tamb
Tstg
Supply voltage
Input voltage
Input current
Voltage applied to output in High output state
Current applied to output in Low output state
Operating free-air temperature range
Storage temperature range
RATING
–0.5 to +7.0
–0.5 to +7.0
–30 to +5
–0.5 to VCC
40
0 to +70
–65 to +150
UNIT
V
V
mA
V
mA
°C
°C
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VIH
VIL
IIK
IOH
IOL
Tamb
Supply voltage
High-level input voltage
Low-level input voltage
Input clamp current
High-level output current
Low-level output current
Operating free air temperature range
LIMITS
MIN
NOM
MAX
4.5 5.0 5.5
2.0
0.8
–18
–1
20
0 +70
UNIT
V
V
V
mA
mA
mA
°C
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER
TEST CONDITIONS1
LIMITS
MIN TYP2 MAX
UNIT
VOH High-level output voltage
VCC = MIN, VIL = MAX
VIH = MIN, IOH = MAX
±10%VCC
±5%VCC
2.5
2.7
3.4
V
VOL Low-level output voltage
VCC = MIN, VIL = MAX
VIH = MIN, IOl = MAX
±10%VCC
±5%VCC
0.35 0.50
0.35 0.50
V
VIK Input clamp voltage
VCC = MIN, II = IIK
–0.73 –1.2
V
II
Input current at maximum input voltage
VCC = MAX, VI = 7.0V
100 µA
IIH High-level input current
VCC = MAX, VI = 2.7V
20 µA
IIL Low-level input current
IOS Short-circuit output current3
VCC = MAX, VI = 0.5V
VCC = MAX
–0.6 mA
–60
–150
mA
74F10 ICCH VCC = MAX
ICC Supply current (total)
ICCL
74F11 ICCH VCC = MAX
ICCL
VIN = GND
VIN = 4.5V
VIN = 4.5V
VIN = GND
1.8 2.1
6.0 7.7
4.7 6.2
7.2 9.7
mA
mA
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at VCC = 5V, Tamb = 25°C.
3. Not more than one output should be shorted at a time. For testing IOS, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, IOS tests should be performed last.
September 20, 1989
4
4페이지 Philips Semiconductors
Gates
SO14: plastic small outline package; 14 leads; body width 3.9 mm
Product specification
74F10, 74F11
SOT108-1
1989 Sep 20
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ N74F11D.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
N74F112D | Dual J-K negative edge-triggered flip-flop | Philips |
N74F112N | Dual J-K negative edge-triggered flip-flop | Philips |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |