NBB-312 Datasheet PDF - RF Micro Devices
| Part Number | NBB-312 | |
| Description | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz | |
| Manufacturers | RF Micro Devices | |
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There is a preview and NBB-312 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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Typical Applications
• Narrow and Broadband Commercial and
Military Radio Designs
• Linear and Saturated Amplifiers
NBB-312
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Product Description
The NBB-312 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and microwave amplification needs. This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-312 provides flexibility and stability. The
NBB-310 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either 1,000 or 3,000 piece-per-reel quantities. Connec-
torized evaluation board designs optimized for high fre-
quency are also available for characterization purposes.
2.94 min
3.28 max
Pin 1
Indicator
N6
1.00 min
1.50 max
0.025 min
0.125 max
Pin 1
Indicator
RF OUT
Ground
0.50 nom
0.50 nom
Ground
RF IN
Lid ID
1.70 min
1.91 max
0.38 nom
2.39 min
2.59 max
All Dimensions in Millimeters
0.37 min
0.63 max
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
0.98 min
1.02 max
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
9InGaP/HBT
SiGe HBT
GaN HEMT
Si CMOS
SiGe Bi-CMOS
Pin 1
Indicator
123
RF OUT
Ground
894
Ground
RF IN
765
Functional Block Diagram
Rev A3 030912
Package Style: MPGA, Bowtie, 3x3, Ceramic
Features
• Reliable, Low-Cost HBT Design
• 12.5dB Gain
• High P1dB of +15.8dBm at 6GHz
• Single Power Supply Operation
• 50Ω I/O Matched for High Frequency
Use
Ordering Information
NBB-312
Cascadable Broadband GaAs MMIC Amplifier DC to
12 GHz
NBB-312-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NBB-312-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Greensboro, NC 27409, USA
Fax (336) 664 0454
http://www.rfmd.com
4-25
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NBB-312
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluation Boards and High Frequency SMA Connectors
• Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A3 030912
4-29
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NBB-312 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NBB-312.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| NBB-310 | The function is CASCADABLE BROADBAND GaAs MMIC AMPLIFIER. RF Micro Devices | |
| NBB-312 | The function is CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz. RF Micro Devices | |
| NBB-312-E | The function is CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz. RF Micro Devices | |
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