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PDF NDS9400A Data sheet ( Hoja de datos )
| Número de pieza | NDS9400A | |
| Descripción | Single P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
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NDS9400A
Single P-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
-3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Rugged and reliable.
________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
NDS9400A
-30
± 20
± 3.4
± 10
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS9400A.SAM
1 page  
Typical Electrical Characteristics (continued)
1.1
1.08
I D = -250µA
1.06
1.04
1.02
1
0.98
0.96
0 . 9 4- 5 0
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 V GS = 0V
1
0.5 TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.2
0.4 0.6 0.8 1 1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
1000
800
500
300
200
C iss
C oss
100
50
0.1
f = 1 MHz
VGS = 0V
0.2
0.5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
C rss
30
Figure 9. Capacitance Characteristics.
10
I D = -3.4A
8
6
VDS = -10V
-20V
-15V
4
2
0
0 2 4 6 8 10
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
12
6
VDS = -15V
5
4
3
TJ = -55°C
25°C
125°C
2
1
0
0 -2 -4 -6 -8 -10
ID , DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS9400A.SAM
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