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PDF NDS9958 Data sheet ( Hoja de datos )
| Número de pieza | NDS9958 | |
| Descripción | Dual N & P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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February 1996
NDS9958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management, Half bridge motor
control, cellular phone, and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V.
P-Channel -3.5A , -20V, RDS(ON) = 0.1Ω @ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
_______________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous TA = 25°C
- Continuous TA = 70°C
- Pulsed TA = 25°C
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1a)
20
± 20
± 3.5
± 2.8
± 14
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
2
1.6
1
0.9
-55 to 150
78
40
P-Channel
-20
± 20
± 3.5
± 2.8
± 14
© 1997 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
°C/W
NDS9958.SAM
1 page  
Typical Electrical Characteristics: N-Channel (continued)
1.15
I D = 250µA
1.1
1.05
1
0.95
0.9
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 V GS = 0V
2
1
0.5
0.2
0.1
0.05
TJ = 125°C
25°C
-55°C
0.02
0.01
0.2
0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
2000
1000
C iss
500
300
200 f = 1 MHz
C oss
100
0.1
V GS = 0V
0.2 0.5
1
2
C rss
5 10 20
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
30
10
I D = 3.5A
8 VDS = 10V
6
4
2
0
0 4 8 12
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
12
VDS = 1 0 V
10
8
TJ = -55°C
25°C
6 125°C
4
2
0
02468
ID , DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
10
16
NDS9958.SAM
5 Page 
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NDS9958.PDF ] | |
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