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부품번호 | NDT452 기능 |
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기능 | P-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | Fairchild | ||
로고 | |||
전체 6 페이지수
June 1996
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and DC motor
control.
-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V
RDS(ON) = 0.1Ω @ VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
GD S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
D
GS
NDT452AP
-30
±20
-5
- 15
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT452AP Rev. B1
Typical Electrical Characteristics
-20
VGS = -10V
-6.0
-5.0
-15 -4.5
-10
-5
-4.0
-3.5
-3.0
0
0 -1 -2 -3
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
-4
3
V = -3.5V
GS
2.5 - 4.0
-4.5
2
-5.0
1.5 -6.0
1 -10
0.5
0
-4 -8 -12 -16
ID , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
-20
1.6
ID = -5.0A
1.4 V GS = -10V
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
2
VGS = -10V
1.5
TJ = 125°C
25°C
1
-55°C
0.5
0
-4 -8 -12 -16
ID , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
-20
-20
VDS = -10V
-15
-10
TJ = -55°C
125°C
25°C
-5
0
-1 -2 -3 -4 -5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-6
1.2
V DS = VGS
1.1 I D = -250µA
1
0.9
0.8
0.7
0.6
-50
-25
0 25 50 75 100
TJ , JUNCTION TEMPERATURE (°C)
125
Figure 6. Gate Threshold Variation with
Temperature.
150
NDT452AP Rev. B1
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ NDT452.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NDT451 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
NDT451 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |