|
|
PDF NDT453N Data sheet ( Hoja de datos )
| Número de pieza | NDT453N | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDT453N (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
September 1996
NDT453N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
Features
8A, 30V. RDS(ON) = 0.028Ω @ VGS = 10V.
RDS(ON) = 0.042Ω @ VGS = 4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
DD
GDS
Absolute Maximum Ratings
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
TA= 25°C unless otherwise not
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
GS
NDT453N
30
±20
±8
±15
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT453N Rev. D1
1 page  
Typical Electrical Characteristics (continued)
1.15
1.1
ID = 250µA
1.05
1
0.95
0.9
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
20
10
5 VGS =0V
1
TJ = 125°C
0.1
0.01
25°C
-55°C
0.001
0.2
0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
2500
2000
1500
1000
500
C iss
C oss
f = 1 MHz
200
VGS = 0V
C rss
100
0.1
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
10
ID = 8A
8
VDS = 5V 1 0 V
15V
6
4
2
0
0 5 10 15 20 25
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
30
VIN
VG S
RGEN
G
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDT453N Rev. D1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDT453N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDT453N | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |