Datasheet.kr   

NE25139-T1 데이터시트 PDF




NEC에서 제조한 전자 부품 NE25139-T1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 NE25139-T1 자료 제공

부품번호 NE25139-T1 기능
기능 GENERAL PURPOSE DUAL-GATE GaAS MESFET
제조업체 NEC
로고 NEC 로고


NE25139-T1 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

NE25139-T1 데이터시트, 핀배열, 회로
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
GPS
20 10
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
10 5
f = 900 MHz
NF
0
0
5 10
Drain to Source Voltage, VDS (V)
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF
GPS
BVDSX
IDSS
VG1S (OFF)
VG2S (OFF)
IG1SS
IG2SS
|YFS|
CISS
CRSS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µA
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
MIN
16
13
5
-3.5
-3.5
18
0.5
NE25139
39
TYP
MAX
1.1 2.5
20
20 40
10
10
25 35
1.0 1.5
0.02 0.03
California Eastern Laboratories




NE25139-T1 pdf, 반도체, 판매, 대치품
NE25139
NONLINEAR MODEL
UNITS FOR MODEL PARAMETERS
Parameter
Units
time
capacitance
inductance
resistance
voltage
current
seconds
farads
henries
ohms
volts
amps
FET NONLINEAR MODEL PARAMETERS(1)
Parameters
FET1
FET2
UGW
NGF
IS
N
RG
RD
RS
RIS
RID
TAU
CDSO
C11O
C11TH
VINFL
DELTGS
DELTDS
LAMBDA
C11DELT
C12O
C12SAT
CGDSAT
KBK
VBR
NBR
(1) Libra EEFET3 Model
100e-6
4
8.78e-10
1.33
0
0
0
0
0
5.17e-12
1.19e-13
6.1e-13
1.6e-13
-1.1
1.82
0.682
\0.036
0
0
6.81e-14
6.81e-14
0.03
6.5
2
100e-6
4
8.78e-10
1.33
0
0
0
0
0
5.17e-12
1.19e-13
6.1e-13
1.6e-13
-1.1
1.82
0.682
0.036
0
0
6.81e-14
6.81e-14
0.03
6.5
2
Parameters
IDSOC
RDB
CBS
GDBM
KDB
VDSM
GMMAXAC
GAMMAAC
KAPAAC
PEFFAC
VTOAC
VTSOAC
VDELTAC
GMMAX
GAMMA
KAPA
PEFF
VTO
VTSO
VDELT
VCH
VSAT
VGO
VDSO
FET1
0.07
1.0e9
0.16e-12
0.005
11.1
7.1e-11
0.0475
0.0107
0.0001
44.9
-1.584
-100
0.062
0.0554
0.006
0.046
1.636
-1.57
-100
0.135
1
1.119
-0.654
3
FET2
0.07
1.0e9
0.16e-12
0.005
11.1
7.1e-11
0.0875
0.0051
0.0052
44.9
-1.545
-100
0.062
0.0304
0.005
0.0005
1.636
-1.5
-10
0.1
1
1.119
-0.0035
10

4페이지










NE25139-T1 전자부품, 판매, 대치품
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
j50
j25 j100
j150
j10 j250
+150˚
+120˚
+90˚
S21
1.2 GHz
NE25139
+60˚
+30˚
S22
0 10 25 50 100 150 250 .1 GHz S11
.1 GHz
S22
4 GHz
+180˚
.5 .10 .15 .20 .25 0˚
1.0
-j10
-j25
S11 -j250
4 GHz
-j150
Coordinates in Ohms
-150˚
Frequency in GHz
-j100 (VDS = 5 V, VG2S = 1 V, ID = 10 mA)
-120˚
1.5
2.0
S21 2.5
-30˚
-60˚
-j50 -90˚
NE25139
VDS = 5 V, VG2S = 1 V, ID = 10 mA
FREQUENCY
S11
S21
(GHz)
MAG
ANG
MAG
ANG
S12
MAG
ANG
S22
MAG
ANG
K S21 MAG1
(dB) (dB)
0.1
.99
-3 2.36
177 .001
87 .97 -1
0.47 5.83 2.9
0.2
.99
-7 2.39
169 .001
85 .98 -3
0.51 5.7 32.8
0.3
.99
-9 2.31
164 .002
82 .98 -3
0.70 5.6 32.8
0.4
.98
-13 2.23
160 .002
82 .97 -6
1.14 5.6 27.5
0.5
.97
-16 2.42
158 .003
81 .99 -6
1.18 5.6 24.2
0.6
.97
-19 2.30
150 .003
81 .96 -8
1.49 5.6 22.6
0.7
.96
-22 2.33
146 .004
80 .99 -9
2.03 5.5 19.2
0.8
.95
-25 2.23
142 .005
79 .96 -9
2.21 3.6 16.6
0.9
.94
-29 2.45
137 .005
79 .99 -13
1.34 3.0 17.2
1.0
.92
-29 2.30
131 .006
78 .97 -11
0.32 2.9 17.8
1.1
.91
-35 2.35
126 .006
78 .98 -15
0.04 2.1 15.1
1.2
.88
-35 2.37
124 .006
78 .99 -13
0.07 1.6 14.6
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | | 2 - |S11| 2 - |S22| 2 , = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
(SOT-143)
+0.2
2.8 -0.3
+0.2
1.5 -0.1
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.9 ± 0.2 0.95
0.85
2
3
1.9
1
PIN +0.10
CONNECTIONS 0.6 -0.05
1. Source
2. Drain
3. Gate 2
4. Gate 1
1.1+-00..21 0.8
4
0.16
+0.10
-0.06
ORDERING INFORMATION
PART
NUMBER
NE25139
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
NE25139T1U73
NE25139U74
NE25139T1U74
AVAILABILITY
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
IDSS RANGE
(mA)
5 - 40
5 - 40
5 - 15
5 - 15
10 - 25
10 - 25
20 - 35
20 - 35
30 - 40
30 - 40
MARKING
U71
U71
U72
U72
U73
U73
U74
U74
5˚ 5˚
0 to 0.1
Note: All dimensions are typical unless otherwise specified.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
8/98

7페이지


구       성 총 7 페이지수
다운로드[ NE25139-T1.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
NE25139-T1

GENERAL PURPOSE DUAL-GATE GaAS MESFET

NEC
NEC

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵