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부품번호 | NE25139U71 기능 |
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기능 | GENERAL PURPOSE DUAL-GATE GaAS MESFET | ||
제조업체 | NEC | ||
로고 | |||
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
GPS
20 10
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
10 5
f = 900 MHz
NF
0
0
5 10
Drain to Source Voltage, VDS (V)
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF
GPS
BVDSX
IDSS
VG1S (OFF)
VG2S (OFF)
IG1SS
IG2SS
|YFS|
CISS
CRSS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µA
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
MIN
16
13
5
-3.5
-3.5
18
0.5
NE25139
39
TYP
MAX
1.1 2.5
20
20 40
10
10
25 35
1.0 1.5
0.02 0.03
California Eastern Laboratories
NE25139
NONLINEAR MODEL
UNITS FOR MODEL PARAMETERS
Parameter
Units
time
capacitance
inductance
resistance
voltage
current
seconds
farads
henries
ohms
volts
amps
FET NONLINEAR MODEL PARAMETERS(1)
Parameters
FET1
FET2
UGW
NGF
IS
N
RG
RD
RS
RIS
RID
TAU
CDSO
C11O
C11TH
VINFL
DELTGS
DELTDS
LAMBDA
C11DELT
C12O
C12SAT
CGDSAT
KBK
VBR
NBR
(1) Libra EEFET3 Model
100e-6
4
8.78e-10
1.33
0
0
0
0
0
5.17e-12
1.19e-13
6.1e-13
1.6e-13
-1.1
1.82
0.682
\0.036
0
0
6.81e-14
6.81e-14
0.03
6.5
2
100e-6
4
8.78e-10
1.33
0
0
0
0
0
5.17e-12
1.19e-13
6.1e-13
1.6e-13
-1.1
1.82
0.682
0.036
0
0
6.81e-14
6.81e-14
0.03
6.5
2
Parameters
IDSOC
RDB
CBS
GDBM
KDB
VDSM
GMMAXAC
GAMMAAC
KAPAAC
PEFFAC
VTOAC
VTSOAC
VDELTAC
GMMAX
GAMMA
KAPA
PEFF
VTO
VTSO
VDELT
VCH
VSAT
VGO
VDSO
FET1
0.07
1.0e9
0.16e-12
0.005
11.1
7.1e-11
0.0475
0.0107
0.0001
44.9
-1.584
-100
0.062
0.0554
0.006
0.046
1.636
-1.57
-100
0.135
1
1.119
-0.654
3
FET2
0.07
1.0e9
0.16e-12
0.005
11.1
7.1e-11
0.0875
0.0051
0.0052
44.9
-1.545
-100
0.062
0.0304
0.005
0.0005
1.636
-1.5
-10
0.1
1
1.119
-0.0035
10
4페이지 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
j50
j25 j100
j150
j10 j250
+150˚
+120˚
+90˚
S21
1.2 GHz
NE25139
+60˚
+30˚
S22
0 10 25 50 100 150 250 .1 GHz S11
.1 GHz
S22
4 GHz
+–180˚
.5 .10 .15 .20 .25 0˚
1.0
-j10
-j25
S11 -j250
4 GHz
-j150
Coordinates in Ohms
-150˚
Frequency in GHz
-j100 (VDS = 5 V, VG2S = 1 V, ID = 10 mA)
-120˚
1.5
2.0
S21 2.5
-30˚
-60˚
-j50 -90˚
NE25139
VDS = 5 V, VG2S = 1 V, ID = 10 mA
FREQUENCY
S11
S21
(GHz)
MAG
ANG
MAG
ANG
S12
MAG
ANG
S22
MAG
ANG
K S21 MAG1
(dB) (dB)
0.1
.99
-3 2.36
177 .001
87 .97 -1
0.47 5.83 2.9
0.2
.99
-7 2.39
169 .001
85 .98 -3
0.51 5.7 32.8
0.3
.99
-9 2.31
164 .002
82 .98 -3
0.70 5.6 32.8
0.4
.98
-13 2.23
160 .002
82 .97 -6
1.14 5.6 27.5
0.5
.97
-16 2.42
158 .003
81 .99 -6
1.18 5.6 24.2
0.6
.97
-19 2.30
150 .003
81 .96 -8
1.49 5.6 22.6
0.7
.96
-22 2.33
146 .004
80 .99 -9
2.03 5.5 19.2
0.8
.95
-25 2.23
142 .005
79 .96 -9
2.21 3.6 16.6
0.9
.94
-29 2.45
137 .005
79 .99 -13
1.34 3.0 17.2
1.0
.92
-29 2.30
131 .006
78 .97 -11
0.32 2.9 17.8
1.1
.91
-35 2.35
126 .006
78 .98 -15
0.04 2.1 15.1
1.2
.88
-35 2.37
124 .006
78 .99 -13
0.07 1.6 14.6
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
(SOT-143)
+0.2
2.8 -0.3
+0.2
1.5 -0.1
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.9 ± 0.2 0.95
0.85
2
3
1.9
1
PIN +0.10
CONNECTIONS 0.6 -0.05
1. Source
2. Drain
3. Gate 2
4. Gate 1
1.1+-00..21 0.8
4
0.16
+0.10
-0.06
ORDERING INFORMATION
PART
NUMBER
NE25139
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
NE25139T1U73
NE25139U74
NE25139T1U74
AVAILABILITY
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
IDSS RANGE
(mA)
5 - 40
5 - 40
5 - 15
5 - 15
10 - 25
10 - 25
20 - 35
20 - 35
30 - 40
30 - 40
MARKING
U71
U71
U72
U72
U73
U73
U74
U74
5˚ 5˚
0 to 0.1
Note: All dimensions are typical unless otherwise specified.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
8/98
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
NE25139U71 | GENERAL PURPOSE DUAL-GATE GaAS MESFET | NEC |
NE25139U72 | GENERAL PURPOSE DUAL-GATE GaAS MESFET | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |