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부품번호 | NE325S01-T1 기능 |
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기능 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | ||
제조업체 | NEC | ||
로고 | |||
전체 5 페이지수
www.DataSheet4U.com
C to KU BAND SUPER LOW NE325S01
NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• SUPER LOW NOISE FIGURE:
0.45 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB TYP at 12 GHz
• GATE LENGTH: ≤ 0.20 µm
• GATE WIDTH: 200 µm
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE325S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise figure and high
associated gain make it suitable for commercial systems and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V
ID = 10 mA
24
20
Ga
16
1.0 12
0.5
0
1
8
NF
2 4 6 8 10 14
Frequency, f (GHz)
4
20 30
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
SYMBOLS
VDS
ID
Pin
CHARACTERISTICS UNITS MIN TYP MAX
Drain to Source Voltage V
23
Drain Current
mA 10 20
Input Power
dBm
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NF1
GA1
IDSS
gm
VGS(off)
IGSO
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz
Saturated Drain Current, VDS = 2 V, VGS = 0 V
Transconductance, VDS = 2 V, ID = 10 mA
Gate to Source Cutoff Voltage, VDS = 2 V,ID = 100 µA
Gate to Source Leak Current, VGS = -3 V
UNITS
dB
dB
mA
mS
V
µA
NE325S01
S01
MIN TYP
0.45
11.0 12.5
20 60
45 60
-0.2 -0.7
0.5
MAX
0.55
90
-2.0
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
NE325S01
NONLINEAR MODEL
SCHEMATIC
GATE
CGD_PKG
0.001pF
Ldx
Lgx
Rgx 0.69nH
6 ohms
CGS_PKG
0.07pF
Q1 0.6nH Rdx
6 ohms
Lsx
0.07nH
Rsx
0.06 ohms
DRAIN
CDS_PKG
0.05PF
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
VTO
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
Q
DELTA
VBI
IS
N
RIS
RID
TAU
CDS
RDB
CBS
CGSO
CGDO
DELTA1
DELTA2
FC
VBR
Q1
-0.8
0
8
0.103
0.092
0.08
2
1
0.715
3e-13
1.22
0
0
4e-12
0.13e-12
5000
1e-9
0.3e-12
0.02e-12
0.3
0.1
0.5
Infinity
Parameters
RG
RD
RS
RGMET
KF
AF
TNOM
XTI
EG
VTOTC
BETATCE
FFE
Q1
3
2
2
0
0
1
27
3
1.43
0
0
1
(1) Series IV Libra TOM Model
SOURCE
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
Date:
VDS = 1 V to 3 V, ID = 5 mA to 30 mA
IDSS = 59.9 ma @ VGS = 0, VDS = 2 V
2/98
4페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NE325S01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | NEC |
NE325S01-T1B | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |