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PDF NE4210M01-T1 Data sheet ( Hoja de datos )
| Número de pieza | NE4210M01-T1 | |
| Descripción | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz
• 6pin super minimold package
• Gate Width: Wg = 200µm
ORDERING INFORMATION
Part Number
NE4210M01-T1
Package
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation
side of the tape
Marking
V73
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
−3.0
Drain Current
ID IDSS
Gate Current
IG 100
Total Power Dissipation
Ptot
125
Channel Temperature Tch 125
Storage Temperature
Tstg −65 to +125
Unit
V
V
mA
µA
mW
°C
°C
The information in this document is subject to change without notice.
Document No. P13682EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998
1 page  
Gain Calculations
MSG. = S21
S12
K = 1 + ∆2−S112−S222
2 S12S21
MAG. = S21 (K ± √K2 − 1)
S12
∆ = S11 • S22 − S21 • S12
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
20
Ga
2.0
VDS = 2 V
ID = 10 mA
16
1.5 12
1.0 8
0.5 4
NF
00
1 2 4 6 8 10 14 20 30
f - Frequency - GHz
NE4210M01
Preliminary Data Shee
5
5 Page 
[MEMO]
NE4210M01
Preliminary Data Shee
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NE4210M01-T1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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