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부품번호 | NE429M01-T1 기능 |
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기능 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | ||
제조업체 | NEC | ||
로고 | |||
전체 12 페이지수
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE429M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super low noise figure & High associated gain
NF = 0.9 dB TYP., Ga = 10 dB TYP. @ f = 12 GHz
• 6-pin super minimold package
• Gate width: Wg = 200µm
ORDERING INFORMATION
Part Number
NE429M01-T1
Package
6-pin super minimold
Marking
V72
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape
Qty 3 kpcs/reel
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
Ptot
Tch
Tstg
Ratings
4.0
−3.0
IDSS
100
125
125
−65 to +125
Unit
V
V
mA
µA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12254EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1997, 1999
Gain Calculations
MSG. = S21
S12
K = 1 + ∆2−S112−S222
2 S12S21
MAG. = S21
S12
(K ± √K2 − 1)
∆ = S11 • S22 − S21 • S12
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
20
Ga
2.0
VDS = 2 V
ID = 10 mA
16
1.5 12
1.0 8
0.5 4
NF
00
1 2 4 6 8 10 14 20 30
Frequency f (GHz)
NE429M01
4 Data Sheet P12254EJ3V0DS00
4페이지 NE429M01
NOISE PARAMETERS
VDS = 2 V, ID = 10 mA
Freq. (GHz)
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
NFmin. (dB)
0.40
0.49
0.60
0.74
0.90
1.08
1.30
1.53
Ga (dB)
15.5
13.9
12.5
11.3
10.0
8.9
7.8
6.8
MAG.
0.51
0.49
0.44
0.32
0.23
0.45
0.60
0.76
Γopt.
ANG. (deg.)
75
103
145
−162
−73
−5
42
78
The information in this data is subject to change without notice.
Rn/50
0.18
0.11
0.06
0.06
0.16
0.36
0.58
0.68
Data Sheet P12254EJ3V0DS00
7
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부품번호 | 상세설명 및 기능 | 제조사 |
NE429M01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | NEC |
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