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부품번호 | NE434S01-T1B 기능 |
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기능 | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | ||
제조업체 | NEC | ||
로고 | |||
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE434S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE434S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 Pm
ORDERING INFORMATION
PART NUMBER
NE434S01-T1
NE434S01-T1B
SUPPLYING FORM
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
MARKING
E
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage VGS –3.0
Drain Current
ID IDSS
Total Power Dissipation
Ptot
300
Channel Temperature
Tch 125
Storage Temperature
Tstg –65 to +125
V
V
mA
mW
qC
qC
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
PACKAGE DIMENSIONS
(Unit: mm)
2.0 ± 0.2
1 2.0 ± 0.2
E2
4
3
0.65 TYP.
1.9 ± 0.2
1.6
0.125 ± 0.05
0.4 MAX.
4.0 ± 0.2
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
15
MAX.
2.5
20
0
Unit
V
mA
dBm
Document No. P11344EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
© 1996
S-PARAMETERS
VDS = 2 V, ID = 15 mA
START 2 Ghz, STOP 18 Ghz, STEP 500 Mhz
S11
1.0
0.5 5 2.0
4
3
+135˚
0
2
∞ ±180˚
–135˚
–0.5
–2.0
1
–1.0
Rmax. = 1
+135˚
±180˚
–135˚
S21
+90˚
1
2
5
3
4
+45˚
0.5
00
–90˚
–45˚
Rmax. = 1.0
–0.5
NE434S01
S12
+90˚
Marker
1: 4 GHz
2: 8 GHz
3: 12 GHz
4: 16 GHz
5: 18 GHz
+45˚
1
2
53
4
0
–90˚
–45˚
Rmax. = 0.25
S22
1.0
5
4
3
2
1
2.0
∞
–2.0
–1.0
Rmax. = 1
4
4페이지 Noise Parameters
<Noise Parameters>
VDS = 2 V, ID = 15 mA
Freq (GHz)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
NFmin (dB)
0.32
0.35
0.40
0.46
0.56
0.67
0.80
0.94
1.10
Ga (dB)
16.5
15.5
14.2
13.1
12.0
10.9
9.9
8.9
8.0
NE434S01
MAG.
0.77
0.58
0.43
0.32
0.27
0.27
0.34
0.48
0.69
*opt.
ANG. (deg.)
15
43
82
127
175
–139
–100
–70
–56
Rn/50
0.19
0.18
0.13
0.08
0.07
0.10
0.17
0.29
0.46
7
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ NE434S01-T1B.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
NE434S01-T1 | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | NEC |
NE434S01-T1B | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |