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부품번호 | NE5210D 기능 |
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기능 | Transimpedance amplifier 280MHz | ||
제조업체 | Philips | ||
로고 | |||
Philips Semiconductors
Transimpedance amplifier (280MHz)
Product specification
NE5210
DESCRIPTION
The NE5210 is a 7kΩ transimpedance wide band, low noise
amplifier with differential outputs, particularly suitable for signal
recovery in fiber-optic receivers. The part is ideally suited for many
other RF applications as a general purpose gain block.
FEATURES
• Low noise: 3.5pA/√Hz
• Single 5V supply
• Large bandwidth: 280MHz
• Differential outputs
• Low input/output impedances
• High power supply rejection ratio
• High overload threshold current
• Wide dynamic range
• 7kΩ differential transresistance
APPLICATIONS
• Fiber-optic receivers, analog and digital
• Current-to-voltage converters
PIN CONFIGURATION
D Package
GND2 1
GND2 2
NC 3
IIN 4
NC 5
VCC1 6
VCC2 7
14 OUT (–)
13 GND2
12 OUT (+)
11 GND1
10 GND1
9 GND1
8 GND1
TOP VIEW
• Wideband gain block
• Medical and scientific instrumentation
• Sensor preamplifiers
• Single-ended to differential conversion
• Low noise RF amplifiers
• RF signal processing
SD00318
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Small Outline (SO) Package
TEMPERATURE RANGE
0 to +70°C
ORDER CODE
NE5210D
DWG #
SOT108-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
VCC
TA
TJ
TSTG
PDMAX
IINMAX
Power supply
Operating ambient temperature range
Operating junction temperature range
Storage temperature range
Power dissipation, TA=25°C (still air)1
Maximum input current2
6
0 to +70
-55 to +150
-65 to +150
1.0
5
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance: θJA=125°C/W.
2. The use of a pull-up resistor to VCC for the PIN diode, is recommended.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC Supply voltage
TA Ambient temperature range
TJ Junction temperature range
RATING
4.5 to 5.5
0 to +70
0 to +90
UNIT
V
°C
°C
°C
W
mA
UNIT
V
°C
°C
1995 Apr 26
1 853-1654 15170
Philips Semiconductors
Transimpedance amplifier (280MHz)
Product specification
NE5210
TEST CIRCUITS (Continued)
NETWORK ANALYZER
5V
10µF
0.1µF
PORT 1
S-PARAMETER TEST SET
PORT 2
10µF
0.1µF
CURRENT PROBE
1mV/mA
16
CAL
VCC1
IN
GND1
VCC2 33
OUT
OUT
33
GND2
0.1µF
0.1µF
100
BAL.
TRANSFORMER
NH0300HB
50 TEST
UNBAL.
Test Circuit 3
NETWORK ANALYZER
5V
10µF
0.1µF
PORT 1
S-PARAMETER TEST SET
PORT 2
10µF
0.1µF
CURRENT PROBE
1mV/mA
16
CAL
5V
10µF
VCC2
VCC1 33 0.1µF
0.1µF
IN
OUT
OUT
33
100
BAL.
TRANSFORMER
NH0300HB
50 TEST
UNBAL.
GND1
GND2
0.1µF
Test Circuit 4
SD00320
1995 Apr 26
4
4페이지 Philips Semiconductors
Transimpedance amplifier (280MHz)
Product specification
NE5210
TEST CIRCUITS (Continued)
Typical Differential Output Voltage
vs Current Input
5V
IIN (µA)
OUT +
IN DUT
OUT –
GND1
GND2
+
VOUT (V)
–
2.00
1.60
1.20
0.80
0.40
0.00
–0.40
–0.80
–1.20
–1.60
–2.00
–400
–320
–240
–160
–80 0 80
CURRENT INPUT (µA)
160 240
320 400
NE5210 TEST CONDITIONS
Procedure 1
RT measured at 60µA
RT = (VO1 – VO2)/(+60µA – (–60µA))
Where: VO1 Measured at IIN = +60µA
VO2 Measured at IIN = –60µA
Procedure 2
Linearity = 1 – ABS((VOA – VOB) / (VO3 – VO4))
Where: VO3 Measured at IIN = +120µA
VO4 Measured at IIN = –120µA
VOA + RT @ () 120mA) ) VOB
VOB + RT @ (* 120mA) ) VOB
Procedure 3
VOMAX = VO7 – VO8
Where: VO7 Measured at IIN = +260µA
VO8 Measured at IIN = –260µA
Procedure 4
IIN Test Pass Conditions:
VO7 – VO5 > 20mV and V06 – VO5 > 20mV
Where: VO5 Measured at IIN = +160µA
VO6 Measured at IIN = –160µA
VO7 Measured at IIN = +260µA
VO8 Measured at IIN = –260µA
Test Circuit 8
1995 Apr 26
7
SD00323
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ NE5210D.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NE5210 | Transimpedance amplifier 280MHz | Philips |
NE5210D | Transimpedance amplifier 280MHz | Philips |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |