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NE5210D 데이터시트 PDF




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부품번호 NE5210D 기능
기능 Transimpedance amplifier 280MHz
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NE5210D 데이터시트, 핀배열, 회로
Philips Semiconductors
Transimpedance amplifier (280MHz)
Product specification
NE5210
DESCRIPTION
The NE5210 is a 7ktransimpedance wide band, low noise
amplifier with differential outputs, particularly suitable for signal
recovery in fiber-optic receivers. The part is ideally suited for many
other RF applications as a general purpose gain block.
FEATURES
Low noise: 3.5pA/Hz
Single 5V supply
Large bandwidth: 280MHz
Differential outputs
Low input/output impedances
High power supply rejection ratio
High overload threshold current
Wide dynamic range
7kdifferential transresistance
APPLICATIONS
Fiber-optic receivers, analog and digital
Current-to-voltage converters
PIN CONFIGURATION
D Package
GND2 1
GND2 2
NC 3
IIN 4
NC 5
VCC1 6
VCC2 7
14 OUT (–)
13 GND2
12 OUT (+)
11 GND1
10 GND1
9 GND1
8 GND1
TOP VIEW
Wideband gain block
Medical and scientific instrumentation
Sensor preamplifiers
Single-ended to differential conversion
Low noise RF amplifiers
RF signal processing
SD00318
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Small Outline (SO) Package
TEMPERATURE RANGE
0 to +70°C
ORDER CODE
NE5210D
DWG #
SOT108-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
VCC
TA
TJ
TSTG
PDMAX
IINMAX
Power supply
Operating ambient temperature range
Operating junction temperature range
Storage temperature range
Power dissipation, TA=25°C (still air)1
Maximum input current2
6
0 to +70
-55 to +150
-65 to +150
1.0
5
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance: θJA=125°C/W.
2. The use of a pull-up resistor to VCC for the PIN diode, is recommended.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC Supply voltage
TA Ambient temperature range
TJ Junction temperature range
RATING
4.5 to 5.5
0 to +70
0 to +90
UNIT
V
°C
°C
°C
W
mA
UNIT
V
°C
°C
1995 Apr 26
1 853-1654 15170




NE5210D pdf, 반도체, 판매, 대치품
Philips Semiconductors
Transimpedance amplifier (280MHz)
Product specification
NE5210
TEST CIRCUITS (Continued)
NETWORK ANALYZER
5V
10µF
0.1µF
PORT 1
S-PARAMETER TEST SET
PORT 2
10µF
0.1µF
CURRENT PROBE
1mV/mA
16
CAL
VCC1
IN
GND1
VCC2 33
OUT
OUT
33
GND2
0.1µF
0.1µF
100
BAL.
TRANSFORMER
NH0300HB
50 TEST
UNBAL.
Test Circuit 3
NETWORK ANALYZER
5V
10µF
0.1µF
PORT 1
S-PARAMETER TEST SET
PORT 2
10µF
0.1µF
CURRENT PROBE
1mV/mA
16
CAL
5V
10µF
VCC2
VCC1 33 0.1µF
0.1µF
IN
OUT
OUT
33
100
BAL.
TRANSFORMER
NH0300HB
50 TEST
UNBAL.
GND1
GND2
0.1µF
Test Circuit 4
SD00320
1995 Apr 26
4

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NE5210D 전자부품, 판매, 대치품
Philips Semiconductors
Transimpedance amplifier (280MHz)
Product specification
NE5210
TEST CIRCUITS (Continued)
Typical Differential Output Voltage
vs Current Input
5V
IIN (µA)
OUT +
IN DUT
OUT –
GND1
GND2
+
VOUT (V)
2.00
1.60
1.20
0.80
0.40
0.00
–0.40
–0.80
–1.20
–1.60
–2.00
–400
–320
–240
–160
–80 0 80
CURRENT INPUT (µA)
160 240
320 400
NE5210 TEST CONDITIONS
Procedure 1
RT measured at 60µA
RT = (VO1 – VO2)/(+60µA – (–60µA))
Where: VO1 Measured at IIN = +60µA
VO2 Measured at IIN = –60µA
Procedure 2
Linearity = 1 – ABS((VOA – VOB) / (VO3 – VO4))
Where: VO3 Measured at IIN = +120µA
VO4 Measured at IIN = –120µA
VOA + RT @ () 120mA) ) VOB
VOB + RT @ (* 120mA) ) VOB
Procedure 3
VOMAX = VO7 – VO8
Where: VO7 Measured at IIN = +260µA
VO8 Measured at IIN = –260µA
Procedure 4
IIN Test Pass Conditions:
VO7 – VO5 > 20mV and V06 – VO5 > 20mV
Where: VO5 Measured at IIN = +160µA
VO6 Measured at IIN = –160µA
VO7 Measured at IIN = +260µA
VO8 Measured at IIN = –260µA
Test Circuit 8
1995 Apr 26
7
SD00323

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부품번호상세설명 및 기능제조사
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Transimpedance amplifier 280MHz

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NE5210D

Transimpedance amplifier 280MHz

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