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PDF NX5306EK Data sheet ( Hoja de datos )

Número de pieza NX5306EK
Descripción NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE
Fabricantes NEC 
Logotipo NEC Logotipo



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NEC’s 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE NX5306 SERIES
FOR 155 Mb/s and 622 Mb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER:
PO = 5.0 mW
• LOW THRESHOLD CURRENT :
ITH = 10 mA
• HIGH SPEED:
tr = 0.3 ns MAX
tf = 0.3 ns MAX
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• BASED ON TELCORDIA RELIABILITY
DESCRIPTION
NEC’s NX5306 series is a 1310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. This device is ideal for Synchronous Digital
Hierarchy (SDH) systems, long haul STM-1 (L-1.1), short
haul STM-4 (S-4.1), and ITU-T recommendations.
California Eastern Laboratories

1 page




NX5306EK pdf
NX5306 SERIES
ELECTRO-OPTICAL CHARACTERISTICS (TC = -25°C, unless otherwise speciÞed)
PARAMETER
Operating Voltage
Threshold Current
Threshold Output Power
Differential EfÞciency
Temperature Dependence of
Differential EfÞciency
Center Wavelength
Temperature Dependence of
Center Wavelength
Spectral Width
Rise Time
Fall Time
Monitor Current
Monitor Dark Current
Monitor PD Terminal Capacitance
Tracking Error*1
SYMBOL
Vop
Ith
Pth
ηd
Δηd
λC
Δλ/ΔT
CONDITIONS
Po = 5.0 mW, TC = 40 to +85°C
TC = 85°C
TC = 40 to +85°C, IF = Ith
Δηd = 10 log
ηd (@85ºC)
ηd (@25ºC)
Po = 5.0 mW, RMS (20 dB)
TC = 40 to +85°C
TC = 40 to +85°C
σ Po = 5.0 mW, RMS (20 dB)
TC = 40 to +85°C
tr 10-90%
tf 90-10%
Im VR = 5 V, Po = 5.0 mW
ID VR = 5 V
VR = 5 V, TC = 40 to +85°C
Ct VR = 5 V, f = 1 MHz
γ Im = const. (@ Po = 5.0 mW, TC =
25°C)
TC = 40 to +85°C
MIN.
0.32
3.0
TYP.
1.1
10
25
100
0.4
1.2
1 263
0.4
1.0
0.15
0.15
150 300
0.1
6
1.0
*1 Tracking Error: γ
MAX.
1.5
15
30
200
1 360
0.5
2.5
0.3
0.3
600
10
500
20
1.0
Po
(mW)
TC = 25ºC
γ = 10 log Po [dB]
5.0
5.0
TC = -40 to +85ºC
Po
UNIT
V
mA
μW
W/A
dB
nm
nm/
°C
nm
ns
ns
μA
nA
pF
dB
0
Im
Im (mA)

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