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부품번호 | OBTS149 기능 |
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기능 | Smart Lowside Power Switch | ||
제조업체 | Siemens Semiconductor Group | ||
로고 | |||
HITFET®BTS 149
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
• Thermal Shutdown
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
18 mΩ
30 A
19 A
6000 mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
V bb
+
LOAD
1
IN
dv/dt
limitation
Current
lim itation
Overvoltage
protection
Drain
2
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
HITFET®
3
Semiconductor Group
Page 1
M
13.07.1998
Electrical Characteristics
Parameter
at Tj=25°C, unless otherwise specified
Characteristics
Initial peak short circuit current limit
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time VIN to 10% ID:
RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
ID = 19 A, Tj = 25 °C, Vbb = 32 V
ID = 19 A, Tj = 150 °C, Vbb = 32 V
Inverse Diode
Inverse diode forward voltage
IF = 5*19A, tm = 300 µs, VIN = 0 V
BTS 149
Symbol
Values
Unit
min. typ. max.
ID(SCp)
ID(lim)
- 130 - A
30 40 55
ton -
toff -
-dVDS/dton -
dVDS/dtoff
-
40 100 µs
70 170
1 3 V/µs
13
Tjt 150 165 - °C
EAS mJ
6000 -
-
1800 -
-
VSD - 1.1 - V
1Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
Semiconductor Group
Page 4
13.07.1998
4페이지 Typ. transfer characteristics
ID = f(VIN); VDS=12V; Tj=25°C
40
A
ID 30
25
20
15
10
5
0
0 1 2 3 4 5 6 °C 8
Tj
Transient thermal impedance
ZthJC = f(tP)
Parameter: D=tP/T
10 0
K/W D=0.5
ZthJC10 -1
0.2
0.1
0.05
10 -2
0.02
0.01
0.005
10 -3
0
BTS 149
Typ. output characteristic
ID = f(VDS); Tj=25°C
Parameter: VIN
40
ID A
10V
6V
5V
4V
20
Vin=3V
10
0
0 1 2 3V 5
VDS
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
s
tP
10 2
Semiconductor Group
Page 7
13.07.1998
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
OBTS141 | Smart Lowside Power Switch | Siemens Semiconductor Group |
OBTS149 | Smart Lowside Power Switch | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |