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PDF OM3115N Data sheet ( Hoja de datos )
| Número de pieza | OM3115N | |
| Descripción | Hybrid integrated circuits for inductive proximity detectors | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
OM3105P
Hybrid integrated circuits for
inductive proximity detectors
Preliminary specification
File under Discrete Semiconductors, SC17
January 1994
Philips Semiconductors
1 page  
Philips Semiconductors
Hybrid integrated circuits for inductive
proximity detectors
Preliminary specification
OM3105P
400
I O max
(mA)
350
MBD234
300
250
200
150
20
0
20 40 60 80
Ts (oC)
Fig.4 Overload protection as a function of the substrate temperature.
MOUNTING RECOMMENDATIONS
General
If a protective cap is incorporated, it should be as thin as
possible, because its thickness “d” forms part of the
operating distance “S”.
A brass stud wall should not extend beyond the potcore.
The exact value of “S” with its spread is determined by a
number of variables, e.g.:
value of the adjustment resistor Rx,
the oscillator coil,
the metal of the actuator,
the material and shape of the housing.
Soldering recommendations
• Use normal 60/40 solder.
• Use a soldering iron with a fine point.
• Soldering time should be kept to a minimum, not
exceeding 2.5 s per soldering point (Tsld = 250 °C
maximum).
• The substrate should preferably be pre-heated to a
temperature of 100 °C with a minimum of 80 °C and a
maximum of 125 °C.
Potting recommendations
First cover the hybrid IC with about 0.5 mm of silicone
rubber, let it harden and with the parts inserted in the tube,
fill up the tube with epoxy.
d
MSB318
Fig.5 Insertion of potcore in brass tube.
January 1994
5
5 Page | ||
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| PDF Descargar | [ Datasheet OM3115N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| OM3115N | Hybrid integrated circuits for inductive proximity detectors | NXP Semiconductors |
| OM3115P | Hybrid integrated circuits for inductive proximity detectors | NXP Semiconductors |
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