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OPA832 데이터시트 PDF




Burr-Brown에서 제조한 전자 부품 OPA832은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 OPA832 기능
기능 Low-Power / Single-Supply / Fixed-Gain Video Buffer Amplifier
제조업체 Burr-Brown
로고 Burr-Brown 로고


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OPA832 데이터시트, 핀배열, 회로
OPA832
SBOS266B − JUNE 2003 − REVISED SEPTEMBER 2004
Low-Power, Single-Supply, Fixed-Gain
Video Buffer Amplifier
FEATURES
D HIGH BANDWIDTH: 80MHz (G = +2)
D LOW SUPPLY CURRENT: 3.9mA
D FLEXIBLE SUPPLY RANGE:
+2.8V to +11V Single Supply
±1.4V to ±5.5V Dual Supply
D INPUT RANGE INCLUDES GROUND ON
SINGLE SUPPLY
D 4.9VPP OUTPUT SWING ON +5V SUPPLY
D HIGH SLEW RATE: 350V/µsec
D LOW INPUT VOLTAGE NOISE: 9.3nV/Hz
D AVAILABLE IN AN SOT23 PACKAGE
APPLICATIONS
D SINGLE-SUPPLY VIDEO LINE DRIVERS
D CCD IMAGING CHANNELS
D LOW-POWER ULTRASOUND
D PORTABLE CONSUMER ELECTRONICS
Video DAC
976
VI
80.6
+3.3V
OPA832
400
400
75
VO
75Load
VO
= 1V/V
VI
Single-Supply, Low-Cost Video Line Driver
DESCRIPTION
The OPA832 is a low-power, high-speed, fixed-gain amplifier
designed to operate on a single +3.3V or +5V supply.
Operation on ±5V or +10V supplies is also supported. The
input range extends below ground and to within 1V of the
positive supply. Using complementary common-emitter
outputs provides an output swing to within 30mV of ground
and 130mV of the positive supply. The high output drive
current and low differential gain and phase errors also make
it ideal for single-supply consumer video products.
Low distortion operation is ensured by the high gain
bandwidth product (200MHz) and slew rate (850V/µs), making
the OPA832 an ideal input buffer stage to 3V and 5V CMOS
converters. Unlike other low-power, single-supply amplifiers,
distortion performance improves as the signal swing is
decreased. A low 9.3nV/Hz input voltage noise supports
wide dynamic range operation.
The OPA832 is available in an industry-standard SO-8
package. The OPA832 is also available in an ultra-small
SOT23-5 package. For gains other than +1, −1, or +2,
consider using the OPA830.
RELATED PRODUCTS
DESCRIPTION
SINGLES DUALS
Medium Speed
Medium Speed,
Fixed Gain
OPA830
OPA2830
OPA2832
TRIPLES
OPA3832
QUADS
OPA4830
LARGE−SIGNAL BANDWIDTH
(1VPP AT MATCHED LOAD)
0
3
6
9
1
10
Frequency (MHz)
100
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
Copyright 2003−2004, Texas Instruments Incorporated
www.ti.com




OPA832 pdf, 반도체, 판매, 대치품
OPA832
SBOS266B − JUNE 2003 − REVISED SEPTEMBER 2004
www.ti.com
ELECTRICAL CHARACTERISTICS:
Boldface limits are tested at +25°C.
VS
=
+5V
At TA = 25°C, G = +2, and RL = 150to VCM = 2V, unless otherwise noted (see Figure 1).
TYP
PARAMETER
AC PERFORMANCE (see Figure 1)
Small-Signal Bandwidth
Peaking at a Gain of +1
Slew Rate
Rise Time
Fall Time
Settling Time to 0.1%
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
Input Current Noise
NTSC Differential Gain
NTSC Differential Phase
DC PERFORMANCE(4)
Gain Error
Internal RF and RG, Maximum
Minimum
Average Drift
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
Input Offset Current Drift
INPUT
Least Positive Input Voltage
Most Positive Input Voltage
Input Impedance
Differential-Mode
Common-Mode
OUTPUT
Least Positive Output Voltage
Most Positive Output Voltage
Current Output, Sourcing
Current Output, Sinking
Short-Circuit Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Minimum Operating Voltage
Maximum Operating Voltage
Maximum Quiescent Current
Minimum Quiescent Current
Power-Supply Rejection Ratio (PSRR)
THERMAL CHARACTERISTICS
Specification: ID, IDBV
Thermal Resistance
D SO-8
DBV SOT23-5
CONDITIONS
G = +2, VO 0.5VPP
G = −1, VO 0.5VPP
VO 0.5VPP
G = +2, 2V Step
0.5V Step
0.5V Step
G = +2, 1V Step
VO = 2VPP, 5MHz
RL = 150
RL = 500
RL = 150
RL = 500
f > 1MHz
f > 1MHz
RL = 150
RL = 150
G = +2
G = −1
VCM = 2.0V
VCM = 2.0V
+25°C
92
103
4.2
348
4.3
4.6
4.6
−59
−62
−56
−72
9.3
2.3
0.11
0.14
±0.3
±0.2
400
400
±0.5
5.5
±0.1
−0.5
3.3
10  2.1
400  1.2
RL = 1kto 2.0V
RL = 150to 2.0V
RL = 1kto 2.0V
RL = 150to 2.0V
Output Shorted to Either Supply
G = +2, f 100kHz
0.03
0.18
4.94
4.86
80
80
100
0.2
VS = +5V
VS = +5V
Input-Referred
+2.8
3.9
3.9
66
−40 to +85
125
150
OPA832ID, IDBV
MIN/MAX OVER TEMPERATURE
+25°C(1)
0°C to
70°C(2)
−40°C to
+85°C(2)
56 55 55
60 58 58
230 223 223
−56 −56 −55
−59 −59 −59
−50 −49 −47
−65 −62 −58
±1.5 ±1.6 ±1.7
±1.5 ±1.6 ±1.7
455 460 462
345 340 338
0.1 0.1
±5 ±6 ±6.5
±20 ±20
+10 +12 +13
±12 ±12
±1.5 ±2 ±2.5
±10 ±10
−0.2 0 +0.1
3.2 3.1 3.0
0.16 0.18 0.20
0.3 0.35 0.40
4.8 4.6 4.4
4.6 4.5 4.4
60 55 52
60 55 52
+11 +11 +11
4.1 4.8 5.5
3.7 3.5 3.2
61 60 59
UNITS
MHz
MHz
dB
V/µs
ns
ns
ns
dBc
dBc
dBc
dBc
nV/Hz
pA/Hz
%
°
%
%
%/°C
mV
µV/°C
µA
nA/°C
µA
nA/°C
V
V
kΩ  pF
kΩ  pF
V
V
V
V
mA
mA
mA
V
V
mA
mA
dB
°C
°C/W
°C/W
MIN/
MAX
TEST
LEVEL(3)
min B
min B
typ C
min B
max B
max B
max B
max B
max B
max B
max B
max B
max B
typ C
typ C
min A
max B
max A
max A
max B
max A
max B
max A
max B
max A
max B
max B
min B
typ C
typ C
max A
max A
min A
min A
min A
min A
typ C
typ C
typ C
max A
max A
min A
min A
typ C
typ C
typ C
(1) Junction temperature = ambient for +25°C specifications.
(2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over temperature.
(3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only
for information.
(4) Current is considered positive out of node.
4

4페이지










OPA832 전자부품, 판매, 대치품
www.ti.com
TYPICAL CHARACTERISTICS: VS = ±5V (continued)
At TA = 25°C, G = +2, and RL = 150to GND, unless otherwise noted (see Figure 3).
OPA832
SBOS266B − JUNE 2003 − REVISED SEPTEMBER 2004
HARMONIC DISTORTION vs LOAD RESISTANCE
40
G = +2V/V
VO = 2VPP
50 f = 5MHz
60
2nd−Harmonic
70
3rd−Harmonic
80
90
100
Load Resistance ()
1k
HARMONIC DISTORTION vs FREQUENCY
40
G = +2V/V
50 RL = 500
VO = 2VPP
60
2nd−Harmonic
70
80
3rd−Harmonic
90
100
110
0.1
1
Frequency (MHz)
10
20
OUTPUT VOLTAGE AND CURRENT LIMITATIONS
6
1W In ternal
5 Power Limit
4
3
2
1
0
RL = 500
Output
Current Lim it
RL = 50
RL = 100
1
2
3
4
O u tpu t
5 Current Limit
6
160 120
80
40
0
1W Internal
Power Limit
40 80 120 160
IO (mA)
HARMONIC DISTORTION vs OUTPUT VOLTAGE
50
G = +2V/V
RL = 500
60 f = 5MHz
70
80
2nd−Harmonic
90
3rd−Harmonic
100
0 1 2 3 4 5 6 7 8 9 10
Output Swing (VPP)
40
45 PI
50
55
60
65
70
75
80
85
90
26
TWO−TONE, 3RD−ORDER
INTERMODULATION SPURIOUS
50OPA832
400
400
PO
500
20MHz
10MHz
5MHz
22 18 14 10 6 2 2
Single−Tone Load Power (2dBm/div)
6
OUTPUT SWING vs LOAD RESISTANCE
5
G = +2V/V
4 VS = ±5V
3
2
1
0
1
2
3
4
5
10
100
RL ()
1k
7

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