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OPT301M PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 OPT301M
기능 INTEGRATED PHOTODIODE AND AMPLIFIER
제조업체 Burr-Brown Corporation
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OPT301M 데이터시트, 핀배열, 회로
®
FPO
70%
OPT301
INTEGRATED PHOTODIODE
AND AMPLIFIER
FEATURES
q PHOTODIODE SIZE: 0.090 x 0.090 inch
(2.29 x 2.29mm)
q 1MFEEDBACK RESISTOR
q HIGH RESPONSIVITY: 0.47A/W (650nm)
q IMPROVED UV RESPONSE
q LOW DARK ERRORS: 2mV
q BANDWIDTH: 4kHz
q WIDE SUPPLY RANGE: ±2.25 to ±18V
q LOW QUIESCENT CURRENT: 400µA
q HERMETIC TO-99
APPLICATIONS
q MEDICAL INSTRUMENTATION
q LABORATORY INSTRUMENTATION
q POSITION AND PROXIMITY SENSORS
q PHOTOGRAPHIC ANALYZERS
q SMOKE DETECTORS
2
1M
40pF
4
755
λ VO
81
OPT301
3
V+ V–
DESCRIPTION
The OPT301 is an opto-electronic integrated circuit
containing a photodiode and transimpedance
amplifier on a single dielectrically isolated chip. The
transimpedance amplifier consists of a precision FET-
input op amp and an on-chip metal film resistor. The
0.09 x 0.09 inch photodiode is operated at zero bias for
excellent linearity and low dark current.
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered in discrete de-
signs such as leakage current errors, noise pick-up and
gain peaking due to stray capacitance.
The OPT301 operates over a wide supply range (±2.25
to ±18V) and supply current is only 400µA. It is
packaged in a hermetic TO-99 metal package with a
glass window, and is specified for the –40°C to 85°C
temperature range.
SPECTRAL RESPONSIVITY
Ultraviolet
0.5
Using Internal
0.4 1MResistor
0.3
Infrared
0.5
0.4
0.3
0.2 0.2
0.1 0.1
00
100 200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©1994 Burr-Brown Corporation
PDS-1228B
Printed in U.S.A. January, 1994




OPT301M pdf, 반도체, 판매, 대치품
PIN CONFIGURATION
Top View
V+
1
Common
8
NC
7
Photodiode
Area
–In 2
6 NC
3
V–
4
1MFeedback
5
Output
NOTE: Metal package is internally connected to common (Pin 8).
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ................................................................................... ±18V
Input Voltage Range (Common Pin) .................................................... ±VS
Output Short-Circuit (to ground) ............................................... Continuous
Operating Temperature ................................................... –55°C to +125°C
Storage Temperature ...................................................... –55°C to +125°C
Junction Temperature .................................................................... +125°C
Lead Temperature (soldering, 10s) ................................................ +300°C
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
PACKAGE INFORMATION
PRODUCT
PACKAGE
PACKAGE DRAWING
NUMBER(1)
OPT301M
8-Pin TO-99
001-1
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
®
OPT301
4

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OPT301M 전자부품, 판매, 대치품
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required to operate the
OPT301. Applications with high-impedance power supplies
may require decoupling capacitors located close to the
device pins as shown. Output is zero volts with no light and
increases with increasing illumination.
2
ID is proportional
to light intensity
(radiant power).
λ
(0V)
ID
8
1MRF
40pF
ID
4
755
OPT301
VO
VO = ID RF
13
NOTE: Metal package
is internally connected
to common (Pin 8).
0.1µF 0.1µF
+15V
–15V
FIGURE 1. Basic Circuit Connections.
Photodiode current, ID, is proportional to the radiant power
or flux (in watts) falling on the photodiode. At a wavelength
of 650nm (visible red) the photodiode Responsivity, RI, is
approximately 0.45A/W. Responsivity at other wavelengths
is shown in the typical performance curve “Responsivity vs
Wavelength.”
The typical performance curve “Output Voltage vs Radiant
Power” shows the response throughout a wide range of
radiant power. The response curve “Output Voltage vs
Irradiance” is based on the photodiode area of 5.23 x 10–6m2.
The OPT301’s voltage output is the product of the photodiode
current times the feedback resistor, (IDRF). The internal
feedback resistor is laser trimmed to 1MΩ ±2%. Using this
resistor, the output voltage responsivity, RV, is approximately
0.45V/µW at 650nm wavelength.
An external resistor can be used to set a different voltage
responsivity. For values of RF less than 1M, an external
capacitor, CEXT, should be connected in parallel with RF (see
Figure 2). This capacitor eliminates gain peaking and prevents
instability. The value of CEXT can be read from the table in
Figure 2.
LIGHT SOURCE POSITIONING
The OPT301 is 100% tested with a light source that uniformly
illuminates the full area of the integrated circuit, including
the op amp. Although all IC amplifiers are light-sensitive to
some degree, the OPT301 op amp circuitry is designed to
minimize this effect. Sensitive junctions are shielded with
metal, and differential stages are cross-coupled. Furthermore,
the photodiode area is very large relative to the op amp input
circuitry making these effects negligible.
If your light source is focused to a small area, be sure that
it is properly aimed to fall on the photodiode. If a narrowly
focused light source were to miss the photodiode area and
fall only on the op amp circuitry, the OPT301 would not
perform properly. The large (0.090 x 0.090 inch) photodiode
area allows easy positioning of narrowly focused light
sources. The photodiode area is easily visible—it appears
very dark compared to the surrounding active circuitry.
The incident angle of the light source also affects the
apparent sensitivity in uniform irradiance. For small incident
angles, the loss in sensitivity is simply due to the smaller
effective light gathering area of the photodiode (proportional
to the cosine of the angle). At a greater incident angle, light
is reflected and scattered by the side of the package. These
effects are shown in the typical performance curve
“Response vs Incident Angle.”
DARK ERRORS
The dark errors in the specification table include all sources.
The dominant error source is the input offset voltage of the
op amp. Photodiode dark current and input bias current of
the op amp are approximately 2pA and contribute virtually
no offset error at room temperature. Dark current and input
bias current double for each 10°C above 25°C. At 70°C, the
error current can be approximately 100pA. This would
produce a 1mV offset with RF = 10M. The OPT301 is
useful with feedback resistors of 100Mor greater at room
temperature. The dark output voltage can be trimmed to
zero with the optional circuit shown in Figure 3.
6
CEXT
RF
2
1M
4
40pF
λ
81
755
OPT301
3
VO = ID RF
V+ V–
EXTERNAL RF
100M
10M
1M
330k
100k
33k
10k
CEXT
(1)
(1)
(1)
30pF
130pF
180pF
350pF
NOTE: (1) No CEXT required.
FIGURE 2. Using External Feedback Resistor.
®
7 OPT301

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