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P4C198 데이터시트 PDF




ETC에서 제조한 전자 부품 P4C198은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 P4C198 자료 제공

부품번호 P4C198 기능
기능 ULTRA HIGH SPEED 16K x 4
제조업체 ETC
로고 ETC 로고


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P4C198 데이터시트, 핀배열, 회로
P4C198/P4C198L, P4C198A/P4C198AL
ULTRA HIGH SPEED 16K x 4
STATIC CMOS RAMS
P4C198/198L, P4C198A/198AL
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25 ns (Commercial)
– 12/15/20/25/35 ns (Industrial)
– 15/20/25/35/45 ns (Military)
Low Power Operation (Commercial/Military)
– 715 mW Active – 12/15
– 550/660 mW Active – 20/25/35/45/55
– 193/220 mW Standby (TTL Input)
– 83/110 mW Standby (CMOS Input) P4C198/198A
– 9 mW Standby (CMOS Input)
P4C198L/198AL (Military)
5V ± 10% Power Supply
Data Retention, 10 µA Typical Current from 2.0V
P4C198L/198AL (Military)
Output Enable & Chip Enable Control Functions
– Single Chip Enable P4C198
– Dual Chip Enable P4C198A
Common Inputs and Outputs
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil DIP
– 24-Pin 300 mil SOJ (P4C198 only)
– 28-Pin 350 x 550 mil LCC (P4C198 only)
DESCRIPTION
The P4C198/L and P4C198A/L are 65,536-bit ultra high-
speed static RAMs organized as 16K x 4. Each device
features an active low Output Enable control to eliminate
data bus contention. The P4C198/L also have an active
low Chip Enable (the P4C198A/L have two Chip Enables,
both active low) for easy system expansion. The CMOS
memories require no clocks or refreshing and have equal
access and cycle times. Inputs are fully TTL-compatible.
The RAMs operate from a single 5V ± 10% tolerance
power supply. Data integrity is maintained with supply
voltages down to 2.0V. Current drain is typically 10 µA
from a 2.0V supply.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby.
The P4C198/L and P4C198A/L are available in 24-pin 300
mil DIP and SOJ, and 28-pin 350 x 550 mil LCC packages
providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
A
(8)
A
I/O 1
I/O 2
I/O 3
I/O 4
ROW
SELECT
INPUT
DATA
CONTROL
65,536-BIT
MEMORY
ARRAY
COLUMN I/O
CE(CE )
1
(P4C198A ONLY) (CE )
2
WE
OE
COLUMN
SELECT
AA
(6)
PIN CONFIGURATIONS
A0
A1
A2
A3
A4
A5
A6
A7
A8
C E (C E 1)
OE
G ND
1
2
3
4
5
6
7
8
9
10
11
12
24 VCC
23 A13
22 A12
21 A11
20 A10
19 A9
18 NC (C E 2)
17 I/O4
16 I/O3
15 I/O2
14 I/O1
13 W E
3 27
A1
42
28 26
NC
A2 5
1 25 A13
A3 6
24 A12
A4 7
23 A11
A5 8
22 A10
A6 9
21 A9
A7 10
20 I/O
A8 11
19 I/O3
C E 12 14 15 16 18 I/O2
13 1 7
DIP (P4, D4), SOJ (J4)
TOP VIEW
P4C198 (P4C198A)
LCC (L5)
TOP VIEW
P4C198 ONLY
Means Quality, Service and Speed
1Q97
71




P4C198 pdf, 반도체, 판매, 대치품
P4C198/198L, P4C198A/198AL
AC CHARACTERISTICS—READ CYCLE
(V
CC
=
5V
±
10%,
All
Temperature
Ranges)(2)
Sym.
Parameter
-10 -12 -15 -20 -25 -35 -45
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Unit
t Read Cycle Time 10 12 15 20 25 35 45 ns
RC
tAA Address Access 10 12 15 20 25 35 45 ns
Time
tAC Chip Enable
Access Time
10 12 15 20 25 35 45 ns
tOH Output Hold from 2 2 2 2 2 2 2 ns
Address Change
tLZ Chip Enable to
2
2
2
2
2
2
2 ns
Output in Low Z
t Chip Disable to
6 7 8 10 10 14 15 ns
HZ
Output in High Z
tOE Output Enable
6 7 9 12 15 25 30 ns
Low to Data Valid
tOLZ Output Enable to 2 2 2 2 2 2 2 ns
Output in Low Z
t Output Disable to
6
7
9
9 10 14 15 ns
OHZ
Output in High Z
tPU Chip Enable to
0
0
0
0
0
0
0 ns
Power Up Time
tPD Chip Disable to
10 12 15 20 25 35 45 ns
Power Down Time
READ CYCLE NO.1 (O E controlled)(5)
ADDRESS
OE
(12)
CE
DATAOUT
Notes:
5. WE is HIGH for READ cycle.
tAA
tOE
tOLZ (9)
tAC
tLZ (9)
(10)
tRC
tOH
tOHZ(9)
tHZ (9)
74

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P4C198 전자부품, 판매, 대치품
WRITE CYCLE NO. 2 (W E CONTROLLED)(13,14)
P4C198/198L, P4C198A/198AL
ADDRESS
(12)
CE
WE
DATA IN
(11)
DATA OUT
(16)
tWC
tCW
tAW
tWP
tWR
tAH
tAS
DATA UNDEFINED
(9)
tWZ
tDW
DATA VALID
tDH
tOW (9,15)
HIGH IMPEDANCE
1520 08
WRITE CYCLE NO. 3 (C E(12) CONTROLLED)(13,14)
ADDRESS
C E (12)
WE
DATA IN
(16)
tWC
tAS tCW
tAW
t WP
tAH
tWR
tDW
DATA VALID
tDH
DATA OUT
HIGH IMPEDANCE
Notes:
13. CE (CE 1, CE 2 for P4C198A/L) and WE must be LOW for WRITE
cycle.
14. OE is LOW for this WRITE cycle.
15. If CE (CE 1 or CE 2 for P4C198A/L) goes HIGH simultaneously with
WE HIGH, the output remains in a high impedance state.
16. Write Cycle Time is measured from the last valid address to the first
transitioning address.
77

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관련 데이터시트

부품번호상세설명 및 기능제조사
P4C198

ULTRA HIGH SPEED 16K x 4

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ETC
P4C1981

STATIC CMOS RAM

PYRAMID
PYRAMID

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