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PDF PSMN008-75B Data sheet ( Hoja de datos )
| Número de pieza | PSMN008-75B | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | Philips | |
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PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Rev. 01 — 18 September 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PSMN008-75P in SOT78
PSMN008-75B in SOT404 (D2-PAK).
2. Features
s Fast switching
s Low on-state resistance
s Avalanche ruggedness rated.
3. Applications
s DC to DC converters
s Uninterruptable power supplies.
c
c
4. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
mb
3 source (s)
mb connected to
drain (d)
123
MBK106
SOT78
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
1 page  
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 10
Tj = 25 °C
Tj = 175 °C
IDSS drain-source leakage current VGS = 0 V; VDS = 75 V
Tj = 25 °C
Tj = 175 °C
IGSS gate-source leakage current VDS = 0 V; VGS = ±20 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Figure 8 and 9
Tj = 25 oC
Tj = 175 °C
Dynamic characteristics
Qg(tot)
Qgs
total gate charge
gate-source charge
ID = 75 A; VDS = 60 V;
VGS = 10 V; Figure 15
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 13
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
turn-off rise time
VDD = 37.5 V; RD = 1.5 Ω;
VGS = 10 V; RG = 10 Ω
td(off)
turn-off delay time
tf turn-off fall time
Source-drain diode
VSD source-drain (diode forward) IS = 25 A; VGS = 0 V;
voltage
Figure 14
trr
reverse recovery time
IS = 5 A; dIS/dt = −100 A/µs;
Qr recovered charge
VGS = 0 V; VR = 30 V
Min
75
2
1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
90 −
V
34
−−
0.05 10
− 500
4 100
V
V
µA
µA
nA
7.9 8.5
− 20
115 −
21 −
50 −
4.7 −
760 −
400 −
18 −
80 −
170 −
100 −
0.8 1.2
80 −
227 −
mΩ
mΩ
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
V
ns
nC
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
01 20000918 -
Description
Product specification.
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
11 of 14
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PSMN008-75B.PDF ] | |
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