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부품번호 | S8S3122X16 기능 |
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기능 | 256K x 16 SDRAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
S8S3122X16
CMOS SDRAM
256K x 16 SDRAM
128K x 16bit x 2 Banks
Synchronous DRAM
LVTTL
Version 0.0
Sep 2001
Samsung Electronics reserves the right to change products or specification without notice.
Ver 0.0 Sep. '01
S8S3122X16
128K x 16Bit x 2 Banks Synchronous DRAM
CMOS SDRAM
FEATURES
• 3.3V power supply
• LVTTL compatible with multiplexed address
• Dual banks operation
• MRS cycle with address key programs
-. CAS Latency ( 2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system
clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 15.6us refresh duty cycle (1K/16ms)
GENERAL DESCRIPTION
The S8S3122X16 is 4,194,304 bits synchronous high data rate
Dynamic RAM organized as 2 x131,072 words by 16 bits, fabri-
cated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of
system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length
and programmable latencies allow the same device to be useful
for a variety of high bandwidth, high performance memory sys-
tem applications.
ORDERING INFORMATION
Part NO.
S8S3122X16-TCR2
S8S3122X16-TCR1
MAX Freq.
100MHz(CL2)
100MHz(CL3)
Interface
LVTTL
Package
50
TSOP(II)
FUNCTIONAL BLOCK DIAGRAM
Bank Select
Data Input Register
LWE
LDQM
128K x 16
CLK
ADD
128K x 16
Column Decoder
LCKE
LRAS
LCBR
LWE
LCAS
Latency & Burst Length
Programming Register
LWCBR
Timing Register
DQi
LDQM
CLK CKE
CS
RAS
CAS
WE L(U)DQM
* Samsung Electronics reserves the right to
change products or specification without
notice.
Ver 0.0 Sep. '01
4페이지 S8S3122X16
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Sym-
bol
Test Condition
CAS
Latency
Version
-TCR2 -TCR1
Unit
Note
Operating Current
(One Bank Active)
ICC1
Burst Length =1
tRC≥tRC(min)
Io = 0 mA
3 100 90
mA 2
2 100 90
Precharge Standby Cur-
rent in power-down mode
ICC2P CKE≤VIL(max), tCC = 15ns
ICC2PS CKE & CLK≤VIL(max), tCC = ∞
2
mA
2
Precharge Standby Current
in non power-down mode
ICC2N
ICC2NS
CKE≥VIH(min), CS≥VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
CKE≥VIH(min), CLK≤VIL(max), tCC = ∞
Input signals are stable
15
mA
5
Active Standby Current
in power-down mode
ICC3P CKE≤VIL(max), tCC = 15ns
ICC3PS CKE & CLK≤VIL(max), tCC = ∞
3
mA
3
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3N
CKE≥VIH(min), CS≥VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
ICC3NS
CKE≥VIH(min), CLK≤VIL(max), tCC = ∞
Input signals are stable
25 mA
15 mA
Operating Current
(Burst Mode)
Io = 0 mA
ICC4 Page Burst 2Banks Activated
tCCD = 2CLKs
3 100 100
mA 2
2 95 95
Refresh Current
Self Refresh Current
ICC5
ICC6
tRC≥tRC(min)
CKE≤0.2V
3 100 90
mA 3
2 100 90
2 mA
Note : 1. Unless otherwise notes, Input level is CMOS(VIH/VIL=VDDQ/VSSQ) in LVTTL.
2. Measured with outputs open. Addresses are changed only one time during tcc(min).
3. Refresh period is 16ms. Addresses are changed only one time during tcc(min).
Ver 0.0 Sep. '01
7페이지 | |||
구 성 | 총 44 페이지수 | ||
다운로드 | [ S8S3122X16.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
S8S3122X16 | 256K x 16 SDRAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |