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SE103 데이터시트 PDF




SiGe Semiconductor Inc.에서 제조한 전자 부품 SE103은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 SE103 자료 제공

부품번호 SE103 기능
기능 LightCharger 2.5 Gb/s Transimpedance Amplifier Final
제조업체 SiGe Semiconductor Inc.
로고 SiGe Semiconductor  Inc. 로고


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SE103 데이터시트, 핀배열, 회로
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
Applications
§ SONET/SDH-based transmission systems, test
equipment and modules
§ OC-48 fibre optic modules and line termination
§ ATM optical receivers
§ Gigabit Ethernet
§ Fibre Channel
Features
§ Single +3.3 V power supply
§ Input noise current = 360 nA rms when used with
a 0.5 pF detector
§ Transimpedance gain = 2.3 kinto a 50 load
(differential)
§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
§ Differential 50 outputs
§ Bandwidth (-3 dB) = 2.4 GHz
§ Wide data rate range = 50 Mb/s to 2.5 Gb/s
§ Constant photodiode reverse bias voltage = 1.5 V
(anode to input, cathode to VCC)
§ Minimal external components, supply decoupling
only
§ Operating junction temperature range = -40°C to
+125°C
§ Equivalent to Nortel Networks AB89-A2A
Ordering Information
Type
SE1030W
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1030W is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features differential outputs,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. A decoupling capacitor on
the supply is the only external circuitry required. A
system block diagram is shown after the functional
description, on page 3.
Noise performance is optimized for 2.5 Gb/s
operation, with a calculated rms noise based
sensitivity of –26 dBm for 10-10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.9 A/W, with an infinite extinction ratio
source.
SE1030
TzAmp
2.5 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator
Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50
50
OUTP
OUTN
43-DST-01 § Rev 1.5 § May 24/02
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SE103 pdf, 반도체, 판매, 대치품
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below.
Symbol
VCC
VIO
IIO
IIO
VESD
VESD
Tstg
Parameter
Supply Voltage
Voltage at any input or output
Current sourced into any input or output except
TZ_IN
Current sourced into pin TZ_IN
Electrostatic Discharge (100 pF, 1.5 k) except
TZ_IN
Electrostatic Discharge (100 pF, 1.5 k) pin
TZ_IN
Storage Temperature
Min
–0.7
–0.5
–20
–5
–2
–0.25
–65
Max
6.0
VCC+0.5
20
5
2
0.25
150
Unit
V
V
mA
mA
kV
kV
°C
Recommended Operating Conditions
Symbol
VCC
Tj
Parameter
Supply Voltage
Operating Junction Temperature
Min Typ Max
3.1 3.3 3.5
–40 125
Unit
V
°C
DC Electrical Characteristics
Symbol
ICC max
ICC zero
lagc
Parameter
Supply Current (max input current)
Supply Current (zero input current)
AGC Threshold
Vin Input Bias Voltage
Vout
Rout
Output Bias Voltage
Output Resistance
Min
42
VCC–
1.57
35
Typ
66
52
VCC–
1.52
VCC–
0.30
50
Max
101
85
VCC–
1.47
65
Unit
mA
mA
µA pk-pk
V
V
43-DST-01 § Rev 1.5 § May 24/02
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SE103 전자부품, 판매, 대치품
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
The diagram below shows the bondpad configuration of the SE1030W Transimpedance Amplifier. Note that the
diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. There are
three VCC and three VEE1 pads for ease of wire bonding; the VCC and VEE1 pads respectively are connected on-
chip and only one pad of each type is required to be bonded out.
Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.
1004.0
123.0 307.0 134.0
Top
View
230.0
134.0 199.0
1250.0
Side View
All Dimensions in Microns (µm)
43-DST-01 § Rev 1.5 § May 24/02
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