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PDF SE1031W Data sheet ( Hoja de datos )

Número de pieza SE1031W
Descripción LightCharger 2.5 Gb/s Transimpedance Amplifier LP Final
Fabricantes SiGe Semiconductor Inc. 
Logotipo SiGe Semiconductor  Inc. Logotipo



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SE1031W
LightCharger2.5 Gb/s Transimpedance Amplifier LP
Final
Applications
§ SONET/SDH-based transmission systems, test
equipment and modules
§ OC-48 fibre optic modules and line termination
§ ATM over SONET/SDH
§ Gigabit Ethernet
§ Fibre Channel
Features
§ Single +3.3 V power supply
§ Power dissipation = 110 mW (typ)
§ Input nois e current = 360 nA rms when used with
a 0.5 pF detector
§ Transimpedance gain = 2.3 kinto a 50 load
(differential)
§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
§ Differential 50 outputs
§ Bandwidth (-3 dB) = 2.4 GHz
§ Wide data rate range = 50 Mb/s to 2.5 Gb/s
§ Constant photodiode reverse bias voltage = 1.5 V
(anode to input, cathode to VCC)
§ Minimal external components, supply decoupling
only
§ Operating junction temperature range = -40°C to
+125°C
§ Equivalent to Nortel Networks AB89-A4A
Ordering Information
Type
SE1031W
Package
Bare Die
Remark
None
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1031 is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features differential outputs,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. A decoupling capacitor on
the supply is the only external circuitry required. A
system block diagram is shown after the functional
description, on page 3.
Noise performance is optimized for 2.5 Gb/s
operation, with a calculated rms noise based
sensitivity of –26 dBm for 10-10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.9 A/W, with an infinite extinction ratio
source.
SE1031
TzAmp
2.5 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50
50
OUTP
OUTN
54-DST-01 § Rev 1.3 § Apr 11/02
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SE1031W pdf
SE1031W
LightCharger2.5 Gb/s Transimpedance Amplifier LP
Final
AC Electrical Characteristics
Symbol
BW (3dB)
Tz
Dri
Voutmax
Flf
lOL
Pol
Nrms
Sens
Parameter
Small Signal Bandwidth at –3dB point
Differential Transimpedance (50 on each output,
f = 100 MHz)
Input Data Rate
Maximum Differential Output Voltage
Low Frequency Cut-off
Input Current before overload (2.5 Gb/s NRZ data)
Optical Overload
Input Noise Current (in 2 GHz)
Optical Sensitivity [ calculated from input noise
spectral density only, (10-10 BER) ]
Min
1.8
1.6
50
2600
+1.6
Typ Max
2.4
2.3 3.1
2500
300
10 20
360 500
–26
DC and AC electrical characteristics are specified under the following conditions:
Supply Voltage (VCC).........................................3.1 V to 3.5 V
Junction Temperature (Tj)..................................–40°C to 125°C
Load Resistor (RL)...............................................50 AC coupled via 220 nF, for each output
Photodetector Capacitance (Cd).......................0.5 pF
Input bond wire inductance................................1 nH
Photodetector responsivity.................................0.9 A/W
Transimpedance (Tz) measured with 4 µA mean photocurrent
Unit
GHz
k
Mb/s
mV pk-pk
kHz
µA pk-pk
dBm
nA rms
dBm
54-DST-01 § Rev 1.3 § Apr 11/02
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