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Datasheet SE3K-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
SE3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SE308 | GAAS INFRARED EMITTING DIODE NEC diode | | |
| 2 | SE30AFB | Surface Mount ESD Capability Rectifiers SE30AFB thru SE30AFJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
SlimSMA
• Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capa  Vishay rectifier | | |
| 3 | SE30AFD | Surface Mount ESD Capability Rectifiers SE30AFB thru SE30AFJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
SlimSMA
• Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capa Vishay rectifier | | |
| 4 | SE30AFG | Surface Mount ESD Capability Rectifiers SE30AFB thru SE30AFJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
SlimSMA
• Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capa Vishay rectifier | | |
| 5 | SE30AFJ | Surface Mount ESD Capability Rectifiers SE30AFB thru SE30AFJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
SlimSMA
• Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capa Vishay rectifier | | |
| 6 | SE3455 | GaAs Infrared Emitting Diode SE3455/5455
GaAs Infrared Emitting Diode
FEATURES • TO-46 metal can package
• Choice of flat window or lensed package • 90¡ or 20¡ (nominal) beam angle option • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Ideal for high pulsed current applications • M  Honeywell diode | | |
| 7 | SE3470 | AlGaAs Infrared Emitting Diode
SE3470/5470
AlGaAs Infrared Emitting Diode
FEATURES • TO-46 metal can package
• Choice of flat window or lensed package • 90¡ or 20¡ (nominal) beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating tempe Honeywell diode | |
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