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부품번호 | SE5539F 기능 |
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기능 | High frequency operational amplifier | ||
제조업체 | Philips | ||
로고 | |||
전체 13 페이지수
RF COMMUNICATIONS PRODUCTS
NE/SE5539
High frequency operational amplifier
Product specification
IC11
April 15, 1992
Philips Semiconductors
Philips Semiconductors
High frequency operational amplifier
Product specification
NE/SE5539
DC ELECTRICAL CHARACTERISTICS (Continued)
VCC = ±8V, TA = 25°C; unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
VOUT
VOUT
ICC+
ICC-
PSRR
AVOL
AVOL
AVOL
Output voltage swing
Output voltage swing
Positive supply current
Negative supply current
Power supply rejection ratio
Large signal voltage gain
Large signal voltage gain
Large signal voltage gain
RL = 150Ω to GND and
470Ω to -VCC
RL = 25Ω to GND
Over temp
+Swing
-Swing
+Swing
-Swing
RL = 25Ω to GND
TA = 25°C
+Swing
-Swing
VO = 0, R1 = ∞, Over temp
VO = 0, R1 = ∞, TA = 25°C
VO = 0, R1 = ∞, Over temp
VO = 0, R1 = ∞, TA = 25°C
∆VCC = ±1V, Over temp
∆VCC = ±1V, TA = 25°C
VO = +2.3V, -1.7V, RL = 150Ω to
GND, 470Ω to -VCC
VO = +2.3V, -1.7V
Over
temp
RL = 2Ω to GND
TA = 25°C
VO = +2.5V, -2.0V
Over
temp
RL = 2Ω to GND
TA = 25°C
SE5539
MIN TYP MAX
+2.3 +3.0
-1.5 -2.1
+2.5 +3.1
-2.0 -2.7
14 18
14 17
11 15
11 14
300 1000
46 60
48 53 58
NE5539
MIN TYP MAX
+2.3 +2.7
-1.7 -2.2
UNITS
V
V
mA
14 18
mA
11 15
µV/V
200 1000
47 52 57 dB
dB
47 52 57
dB
DC ELECTRICAL CHARACTERISTICS
VCC = ±6V, TA = 25°C; unless otherwise specified.
SYMBOL
PARAMETER
VOS Input offset voltage
IOS Input offset current
IB
CMRR
Input bias current
Common-mode rejection ratio
ICC+ Positive supply current
ICC- Negative supply current
PSRR Power supply rejection ratio
VOUT Output voltage swing
TEST CONDITIONS
Over temp
TA = 25°C
Over temp
TA = 25°C
Over temp
TA = 25°C
VCM = ±1.3V, RS = 100Ω
Over temp
TA = 25°C
Over temp
∆VCC = ±1V
Over
TA = 25°CmA
Over temp
TA = 25°C
+Swing
RL = 150Ω to GND
and 390Ω to –VCC
temp
TA =
25°C
–Swing
+Swing
–Swing
SE5539
MIN TYP MAX
25
23
0.1 3
0.1 1
5 20
4 10
70 85
11 14
11 13
8 11
8 10
300 1000
UNITS
mV
µA
µA
dB
mA
mA
µV/V
+1.4
–1.1
+1.5
–1.4
+2.0
–1.7
+2.0
–1.8
V
1992 Apr 15
4
4페이지 Philips Semiconductors
High frequency operational amplifier
Product specification
NE/SE5539
CIRCUIT LAYOUT CONSIDERATIONS
As may be expected for an ultra-high frequency, wide-gain
bandwidth amplifier, the physical circuit is extremely critical.
Bread-boarding is not recommended. A double-sided copper-clad
printed circuit board will result in more favorable system operation.
An example utilizing a 28dB non-inverting amp is shown in Figure 6.
OPTIONAL
OFFSET
ADJ.
+V
R5
–V
R4
R1
75
VIN
R2
75
R1 = 75Ω 5% CARBON
R2 = 75Ω 5% CARBON
R3 = 75Ω 5% CARBON
R4 = 36K 5% CARBON
RF
1nF
+V
RFC
–14
NE5539
7
10
3
8
+1
1nF
470
R6
RFC
1nF
R3 75
75Ω
VOUT TERM
1nF
—V
R5 = 20k TRIMPOT (CERMET)
RF = 1.5k (28dB GAIN)
R6 = 470Ω 5% CARBON
RFC 3T # 26 BUSS WIRE ON
FERROXCUBE VK 200 09/3B CORE
BYPASS CAPACITORS
1nF CERAMIC
(MEPCO OR EQUIV.)
Top Plane Copper1
(Component Side)
Component Side
(Component Layout)
Bottom Plane
Copper1
—V X
R5
X
RFC
R2 R4 R1 +V
(1)
VIN X
XX
X
CC
X
X
RFC
X
X R6
XX
RF
R5
1992 Apr 15
Figure 6. 28dB Non-Inverting Amp Sample PC Layout
7
SL00575
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
SE5539 | High frequency operational amplifier | Philips |
SE5539 | High frequency operational amplifier | Philips |
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