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부품번호 27C040 기능
기능 4 /194 /304-Bit 512K x 8 High Performance CMOS EPROM
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27C040 데이터시트, 핀배열, 회로
February 1999
NM27C040
4,194,304-Bit (512K x 8) High Performance
CMOS EPROM
General Description
The NM27C040 is a high performance, 4,194,304-bit Electrically
Programmable UV Erasable Read Only Memory. It is organized
as 512K words of 8 bits each. Its pin-compatibility with byte-wide
JEDEC EPROMs enables upgrades through 8 Mbit EPROMs.
The “Don’t Care” feature on VPP during read operations allows
memory expansions from 1M to 8 Mbits with no printed circuit
board changes.
The NM27C040 provides microprocessor-based systems exten-
sive storage capacity for large portions of operating system and
application software. Its 120ns access time provides high speed
operation with high-performance CPUs. The NM27C040 offers a
single chip solution for the code storage requirements of 100%
firmware-based equipment. Frequently used software routines
are quickly executed from EPROM storage, greatly enhancing
system utility.
The NM27C040 is manufactured using Fairchild’s advanced
CMOS AMG™ EPROM technology.
Block Diagram
VCC
GND
VPP
OE
CE/PGM
Output Enable,
Chip Enable, and
Program Logic
Features
s High performance CMOS
— 120, 150ns access time*
s Simplified upgrade path
—VPP is a “Don’t Care” during normal read operation
s Manufacturer’s identification code
s JEDEC standard pin configuration
— 32-pin PDIP
— 32-pin PLCC
— 32-pin CERDIP
*Note: New revision meets 70ns. Please check with factory for availability.
Data Outputs O0 - O7
Output
Buffers
Y Decoder
Y Gating
A0 - A18
Address
Inputs
X Decoder
4,194,304-Bit
Cell Matrix
AMG™ is a trademark of WSI, Inc.
© 1999 Fairchild Semiconductor Corporation
NM27C040 Rev. C.1
1
DS010836-1
www.fairchildsemi.com




27C040 pdf, 반도체, 판매, 대치품
AC Test Conditions
Output Load
1 TTL Gate and CL = 100 pF (Note 8)
Input Rise and Fall Times
5 ns
Input Pulse Levels
0.45V to 2.4V
Timing Measurement Reference Level (Note 10)
Inputs
0.8V and 2V
Outputs`
0.8V and 2V
AC Waveforms (Notes 6, 7, 9)
ADDRESSES
2V
0.8V
Addresses Valid
CE
2V
0.8V
2V
OE 0.8V
2V
OUTPUT 0.8V
t CE
t OE
(Note 3)
Hi-Z
t ACC
(Note 3)
Valid Output
t CF
(Note 4, 5)
t DF
(Note 4, 5)
Hi-Z
t OH
DS010836-4
Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Note 2: This parameter is only sampled and is not 100% tested.
Note 3: OE may be delayed up to tACC - tOE after the falling edge of CE without impacting tACC.
Note 4: The tDF and tCF compare level is determined as follows:
High to TRI-STATE®, the measured VOH1 (DC) - 0.10V;
Low to TRI-STATE, the measured VOL1 (DC) + 0.10V.
Note 5: TRI-STATE may be attained using OE or CE .
Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 µF ceramic capacitor be used on every device
between VCC and GND.
Note 7: The outputs must be restricted to VCC + 1.0V to avoid latch-up and device damage.
Note 8: 1 TTL Gate: IOL = 1.6 mA, IOH = -400 µA.
CL: 100 pF includes fixture capacitance.
Note 9: VPP may be connected to VCC except during programming.
Note 10: Inputs and outputs can undershoot to -2.0V for 20 ns Max.
NM27C040 Rev. C.1
4 www.fairchildsemi.com

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27C040 전자부품, 판매, 대치품
Functional Description
DEVICE OPERATION
The six modes of operation of the EPROM are listed in Table 1. It
should be noted that all inputs for the six modes are at TTL levels.
The power supplies required are VCC and VPP. The VPP power
supply must be at 12.75V during the three programming modes,
and must be at 5V in the other three modes. The VCC power supply
must be at 6.25V during the three programming modes, and at 5V
in the other three modes.
Read Mode
The EPROM has two control functions, both of which must be
logically active in order to obtain data at the outputs. Chip Enable
(CE/PGM) is the power control and should be used for device
selection. Output Enable (OE) is the output control and should be
used to gate data to the output pins, independent of device
selection. Assuming that addresses are stable, address access
time (tACC) is equal to the delay from CE to output (tCE). Data is
available at the outputs tOE after the falling edge of OE, assuming
that CE/PGM has been low and addresses have been stable for
at least tACC -tOE.
Standby Mode
The EPROM has a standby mode which reduces the active power
dissipation by over 99%, from of 65 mW to 0.55 mW. The EPROM
is placed in the standby mode by applying a CMOS high signal to
the CE/PGM input. When in standby mode, the outputs are in a
high impedance state, independent of the OE input.
Output Disable
The EPROM is placed in output disable by applying a TTL high
signal to the OE input. When in output disable all circuitry is
enabled, except the outputs are in a high impedance state (TRI-
STATE).
Output OR-Typing
Because the EPROM is usually used in larger memory arrays,
Fairchild has provided a 2-line control function that accommo-
dates this use of multiple memory connections. The 2-line control
function allows for:
1. the lowest possible memory power dissipation, and
2. complete assurance that output bus contention will not occur.
To most efficiently use these two control lines, it is recommended
that CE/PGM be decoded and used as the primary device select-
ing function, while OE be made a common connection to all
devices in the array and connected to the READ line from the
system control bus. This assures that all deselected memory
devices are in their low power standby modes and that the output
pins are active only when data is desired from a particular memory
device.
Programming
CAUTION: Exceeding 14V on pin 1 (VPP) will damage the EPROM.
Initially, and after each erasure, all bits of the EPROM are in the
“1’s” state. Data is introduced by selectively programming “0’s”
into the desired bit locations. Although only “0’s” will be pro-
grammed, both “1’s” and “0’s” can be presented in the data word.
The only way to change a “0” to a “1” is by ultraviolet light erasure.
The EPROM is in the programming mode when the VPP power
supply is at 12.75V and OE is at VIH. It is required that at least a
0.1 µF capacitor be placed across VPP, VCC to ground to suppress
spurious voltage transients which may damage the device. The
data to be programmed is applied 8 bits in parallel to the data
output pins. The levels required for the address and data inputs
are TTL.
When the address and data are stable, an active low, TTL program
pulse is applied to the CE/PGM input. A program pulse must be
applied at each address location to be programmed. The EPROM
is programmed with the Turbo Programming Algorithm shown in
Figure 1. Each Address is programmed with a series of 50 µs
pulses until it verifies good, up to a maximum of 10 pulses. Most
memory cells will program with a single 50 µs pulse. (The standard
National Semiconductor Algorithm may also be used but it will
have longer programming time.)
The EPROM must not be programmed with a DC signal applied to
the CE/PGM input.
Programming multiple EPROM in parallel with the same data can
be easily accomplished due to the simplicity of the pro-gramming
requirements. Like inputs of the parallel EPROM may be con-
nected together when they are programmed with the same data.
A low level TTL pulse applied to the CE/PGM input programs the
paralleled EPROM.
Program Inhibit
Programming multiple EPROMs in parallel with different data is
also easily accomplished. Except for CE/PGM all like in-puts
(including OE) of the parallel EPROMs may be com-mon. A TTL
low level program pulse applied to an EPROM’s CE/PGM input
with VPP at 12.75V will program that EPROM. A TTL high level CE/
PGM input inhibits the other EPROMs from being programmed.
Program Verify
A verify should be performed on the programmed bits to determine
whether they were correctly programmed. The verify may be
performed with VPP at 12.75V. VPP must be at VCC, except during
programming and program verify.
AFTER PROGRAMMING
Opaque labels should be placed over the EPROM window to
prevent unintentional erasure. Covering the window will also
prevent temporary functional failure due to the generation of photo
currents.
MANUFACTURER’S IDENTIFICATION CODE
The EPROM has a manufacturer’s identification code to aid in
programming. When the device is inserted in an EPROM pro-
grammer socket, the programmer reads the code and then
automatically calls up the specific programming algorithm for the
part. This automatic programming control is only possible with
programmers which have the capability of reading the code.
The Manufacturer’s Identification code, shown in Table 2, specifi-
cally identifies the manufacturer and device type. The code for
NM27C040 is “8F08”, where “8F” designates that it is made by
Fairchild Semiconductor, and “08” designates a 4 Megabit (512K
x 8) part.
The code is accessed by applying 12V ±0.5V to address pin A9.
Addresses A1–A8, A10–A18, and all control pins are held at VIL.
Address pin A0 is held at VIL for the manufacturer’s code, and held
at VIH for the device code. The code is read on the eight data pins,
O0 –O7 . Proper code access is only guaranteed at 25°C ± 5°C.
NM27C040 Rev. C.1
7 www.fairchildsemi.com

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