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부품번호 | 28C64 기능 |
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기능 | 64K 8K x 8 CMOS E2PROM | ||
제조업체 | ATMEL Corporation | ||
로고 | |||
전체 13 페이지수
Features
• Fast Read Access Time – 150 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
• Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64-byte Page Write Operation
• Low Power Dissipation
– 40 mA Active Current
– 100 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling and Toggle Bit for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28C64B is a high-performance electrically-erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100 µA.
(continued)
Pin Configurations
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PLCC
Top View
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
I/O0 13
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PDIP, SOIC
Top View
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
TSOP
Top View
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28C64B
Rev. 0270H–12/99
1
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
Com.
Ind.
AT28C64B-15
0°C - 70°C
-40°C - 85°C
5V ± 10%
AT28C64B-20
0°C - 70°C
-40°C - 85°C
5V ± 10%
Operating Modes
Mode
CE OE
Read
Write(2)
Standby/Write Inhibit
Write Inhibit
VIL VIL
VIL VIH
VIH X(1)
XX
Write Inhibit
X VIL
Output Disable
X VIH
Chip Erase
VIL
Notes: 1. X can be VIL or VIH.
2. Refer to the “AC Write Waveforms” diagrams in this datasheet.
VH(3)
3. VH = 12.0V ± 0.5V.
DC Characteristics
Symbol
ILI
ILO
ISB1
ISB2
ICC
VIL
VIH
VOL
VOH
Parameter
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Standby Current TTL
VCC Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Condition
VIN = 0V to VCC + 1V
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC + 1V
CE = 2.0V to VCC + 1V
f = 5 MHz; IOUT = 0 mA
IOL = 2.1 mA
IOH = -400 µA
Com., Ind.
WE
VIH
VIL
X
VIH
X
X
VIL
Min
2.0
2.4
AT28C64B-25
0°C - 70°C
-40°C - 85°C
5V ± 10%
I/O
DOUT
DIN
High Z
High Z
High Z
Max Units
10 µA
10 µA
100 µA
2 mA
40 mA
0.8 V
V
0.40 V
V
4 AT28C64B
4페이지 Page Mode Characteristics
Symbol Parameter
tWC Write Cycle Time
tWC
Write Cycle Time (option available; contact Atmel sales office for
ordering part number)
tAS
tAH
tDS
tDH
tWP
tBLC
tWPH
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
Page Mode Write Waveforms(1)(2)
AT28C64B
Min Max Units
10 ms
0 2 ms
0
50
50
0
100
150
50
ns
ns
ns
ns
ns
µs
ns
Notes: 1. A6 through A12 must specify the same page address during each high to low transition of WE (or CE).
2. OE must be high only when WE and CE are both low.
Chip Erase Waveforms
tS = tH = 1 µsec (min.)
tW = 10 msec (min.)
VH = 12.0 ± 0.5V
7
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ 28C64.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
28C64 | 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection | ATMEL Corporation |
28C64 | 64K 8K x 8 CMOS E2PROM | ATMEL Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |