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기능 3 Volt Fast Boot Block Flash Memory
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3 Volt Fast Boot Block Flash Memory
28F800F3—Automotive
Preliminary Datasheet
Product Features
s High Performance
Up to 50 MHz Effective Zero Wait-State
Performance
Synchronous Burst-Mode Reads
Asynchronous Page-Mode Reads
s SmartVoltage Technology
3.0 V3.6 V Read and Write Operations for
Low Power Designs
12 V VPP Fast Factory Programming
s Enhanced Data Protection
Absolute Write Protection with
VPP = GND
Block Locking
Block Erase/Program Lockout during Power
Transitions
s Manufactured on ETOXV Flash Technology
s Supports Code Plus Data Storage
Optimized for Flash Data Integrator (FDI)
and other Intel® Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
s Flexible Blocking Architecture
Eight 4-Kword Blocks for Data
32-Kword Main Blocks for Code
Top or Bottom Boot Configurations
s Extended Cycling Capability
s Low Power Consumption
s Automated Program and Block Erase
Algorithms
Command User Interface for Automation
Status Register for System Feedback
s Industry-Standard Packaging
56-Lead SSOP
Intel® Easy BGA
The Intel® 3 Volt Fast Boot Block Flash memory offers the highest performance synchronous burst reads
making it an ideal memory solution for burst CPUs. The Intel 3 Volt Fast Boot Block Flash memory also
supports asynchronous page mode operation for non-clocked memory subsystems. Combining high read
performance with the intrinsic nonvolatility of flash memory eliminates the traditional redundant memory
paradigm of shadowing code from a slower nonvolatile storage source to a faster execution memory device,
(e.g., SRAM SDRAM), for improved system performance. By adding 3 Volt Fast Boot Block Flash
memory to your system you could reduce the total memory requirement, which helps increase reliability
and reduce overall system power consumptionall while reducing system cost.
This family of products is manufactured on Intel® 0.4 µm ETOXV process technology. They are
available in a wide variety of industry-standard packaging technologies.
Notice: This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290686-003
March 2001




28F800F3 pdf, 반도체, 판매, 대치품
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28F800F3Automotive
7.3 Standby Power.................................................................................................... 25
7.4 Power-Up/Down Operation ................................................................................. 26
7.4.1 RST# Connection................................................................................... 26
7.4.2 VCC, VPP and RST# Transitions........................................................... 26
7.5 Power Supply Decoupling ................................................................................... 26
7.5.1 VPP Trace on Printed Circuit Boards ..................................................... 27
8.0 Electrical Specifications........................................................................................ 28
8.1 Absolute Maximum Ratings ................................................................................ 28
8.2 Automotive Temperature Operating Conditions.................................................. 29
8.3 Capacitance(1) ..................................................................................................... 29
8.4 DC CharacteristicsAutomotive Temperature(1)................................................ 30
8.5 AC CharacteristicsRead-Only Operations(1,2)Automotive Temperature ...... 32
8.6 AC CharacteristicsWrite Operations(1, 2)Automotive Temperature .............. 38
8.7 AC CharacteristicsReset OperationAutomotive Temperature ..................... 40
8.8 Automotive Temperature Block Erase and Program Performance(1,2,3) ............. 41
9.0 Ordering Information .............................................................................................. 42
iv PRELIMINARY

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28F800F3Automotive
1.0
1.1
Introduction
This datasheet contains 8-Mbit 3 Volt Intel® Fast Boot Block Flash memory information. Section
1.0 provides a flash memory overview. Sections 2.0 through 8.0 describe the memory functionality
and electrical specifications for automotive temperature product offerings.
Product Overview
The 3 Volt Fast Boot Block Flash memory provides density upgrades with pinout compatibility for
8-Mbit densities. This family of products is a high-performance, low-voltage memory with a 16-bit
data bus and individually erasable blocks. These blocks are optimally sized for code and data
storage. Eight 4-Kword parameter blocks are positioned at either the top (denoted by -T suffix) or
bottom (denoted by -B suffix) of the address map. The rest of the device is grouped into 32-Kword
main blocks. The upper two (or lower two) parameter blocks, and all main blocks, can be locked
when WP# = VIL for complete code protection.
The devices optimized architecture and interface dramatically increase read performance. It
supports synchronous burst reads and asynchronous page mode reads from main blocks (parameter
blocks support single synchronous and asynchronous reads). Upon initial power-up or return from
reset, the main blocks of the device default to a page-mode. Page-mode is for non-clocked memory
systems and is compatible with page-mode ROM. Synchronous burst reads are enabled by
configuring the Read Configuration Register using the standard two-bus-cycle algorithm. In
synchronous burst mode, the CLK input increments an internal burst address generator,
synchronizes the flash memory with the host CPU, and outputs data on every rising (or falling)
CLK edge up to 50 MHz. An output signal, WAIT#, is also provided to ease CPU-to-flash memory
communication and synchronization during continuous burst operations that are not initiated on a
four-word boundary.
In addition to the enhanced architecture and optimized interface, this family of products
incorporates SmartVoltage technology which enables fast 12 Volt factory programming and 3.0 V
3.6 V in system programming for low power designs. Specifically designed for low-voltage
systems, 3 Volt Fast Boot Block Flash memory components support read, write and erase
operations at 3.0 V3.6 V. The 12 V VPP option renders the fastest program performance to
increase factory programming throughput. With the 3.0 V3.6 V VPP option, VCC and VPP can be
tied together for a simple, low power design. In addition to the voltage flexibility, the dedicated
VPP pin gives complete data protection when VPP VPPLK.
The flexible input/output (I/O) voltage feature of the device helps reduce system power
consumption and simplifies interfacing to sub 3.0 V CPUs. Powered by the VCCQ pins, the I/O
buffers can operate independently of the core voltage. The Flexible I/O ring of the device works in
the following mode:
With VCC and VCCQ at 3.0 V3.6 V the device is an ideal fit for single supply voltage, low
power, and battery-powered applications.
The devices Command User Interface (CUI) serves as the interface between the system processor
and internal flash memory operation. A valid command sequence written to the CUI initiates
device automation. This automation is controlled by an internal Write State Machine (WSM) which
automatically executes the algorithms and timings necessary for block erase and program
operations. The status register provides WSM feedback by signifying block erase or program
completion and status.
PRELIMINARY
1

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28F800F3

3 Volt Fast Boot Block Flash Memory

Intel
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