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PDF T2800D Data sheet ( Hoja de datos )

Número de pieza T2800D
Descripción Silicon Bidirectional Thyristors
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T2800D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
Blocking Voltage to 400 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Four Quadrant Gating
Device Marking: Logo, Device Type, e.g., T2800D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125°C, Gate Open)
VDRM,
VRRM
400
Unit
Volts
On–State RMS Current
IT(RMS) 8.0 Amps
(All Conduction Angles, TC = +80°C)
Peak Non–Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = +80°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
100 Amps
40 A2s
Peak Gate Power
(Pulse Width = 10 µs, TC = +80°C)
PGM
16 Watts
Average Gate Power (t = 8.3 ms,
TC = +80°C)
PG(AV) 0.35 Watt
Peak Gate Current
(Pulse Width = 10 µs, TC = +80°C)
IGM
4.0 Amps
Operating Junction Temperature Range
TJ
– 40 to
+125
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
8 AMPERES RMS
400 VOLTS
MT2
MT1
G
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
T2800D
TO220AB
500/Box
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 3
1
Publication Order Number:
T2800/D

1 page




T2800D pdf
T2800D
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE Z
BF
Q
H
Z
4
123
A
K
L
V
G
N
D
T
U
–T–
SEATING
PLANE
C
S
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.014 0.022
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.36 0.55
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
http://onsemi.com
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