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BAW56 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAW56
기능 Surface Mount Small Signal Double-Diodes
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BAW56 데이터시트, 핀배열, 회로
BAW56
BAW56
Surface Mount Small Signal Double-Diodes
Kleinsignal-Doppel-Dioden für die Oberflächenmontage
Version 2015-05-12
Power dissipation – Verlustleistung
2.9 ±0.1
0.4+0.1
-0.05
3
Type
Code
1
2
1.1+0.1
-0.2
1.9±0.1
Dimensions - Maße [mm]
1 = C1 2 = C2 3 = A1/A2
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
310 mW
85 V
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
per diode / pro Diode
Power dissipation − Verlustleistung 1)
Max. average forward current – Dauergrenzstrom (dc)
Repetitive peak forward current – Periodischer Spitzenstrom
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 ms
tp ≤ 1 µs
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
Reverse voltage – Sperrspannung (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Grenzwerte (TA = 25°C)
BAW56
Ptot 310 mW 2)
IFAV 250 mA 2)
IFRM 450 mA 2)
IFSM 0.5 A
IFSM 1 A
IFSM 2 A
VRRM
85 V
VR 70 V
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
Forward voltage
Durchlass-Spannung
Leakage current 3)
Sperrstrom
Tj = 25°C
Tj = 150°C
Tj = 150°C
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 70 V
VR = 25 V
VR = 70 V
Kennwerte (Tj = 25°C)
VF < 715 mV
VF < 855 mV
VF < 1.0 V
VF < 1.25 V
IR < 100 nA
IR < 30 µA
IR < 50 µA
1 Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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