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BAW56LT1 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAW56LT1
기능 Monolithic Dual Switching Diode Common Anode
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BAW56LT1 데이터시트, 핀배열, 회로
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BAW56LT1
Preferred Device
Dual Switching Diode
Common Anode
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
Non−Repetitive Peak Forward Current
t = 1 ms (Note 3)
VR
IF
IFM(surge)
IFSM
70
200
500
4
V
mA
mA
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Square Wave; Tj = 25°C.
http://onsemi.com
ANODE
3
CATHODE
1
2
CATHODE
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 12
MARKING DIAGRAM
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAW56LT1
BAW56LT1G
BAW56LT3
SOT−23
SOT−23
(Pb−Free)
SOT−23
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
BAW56LT3G SOT−23 10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future
use and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
1
Publication Order Number:
BAW56LT1/D




BAW56LT1 pdf, 반도체, 판매, 대치품
BAW56LT1
PACKAGE DIMENSIONS
D
3
E HE
12
e
A
b A1
SOT−23−3 (TO−236)
CASE 318−08
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
LC
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.35
0.54
0.69
H E 2.10
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
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Monolithic Dual Switching Diode Common Anode

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Monolithic Dual Switching Diode Common Anode

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