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Datasheet BAW62 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BAW62 | High-speed diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAW62 High-speed diode
Product specification Supersedes data of April 1996 1996 Sep 17
Philips Semiconductors
Product specification
High-speed diode
FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 |  Philipss | diode |
| 2 | BAW62 | Small Signal Diode BAW62 Small Signal Diode
December 2004
BAW62
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings * T
Symbol
VRRM IF(AV) IFSM
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Sur |  Fairchild Semiconductor | diode |
| 3 | BAW62 | High-speed diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAW62 High-speed diode
Product data sheet Supersedes data of April 1996
1996 Sep 17
NXP Semiconductors
High-speed diode
Product data sheet
BAW62
FEATURES
• Hermetically sealed leaded glass SOD27 (DO-35) package
• High switching speed: max. 4 ns • |  NXP Semiconductors | diode |
BAW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BAW100 | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1  Central Semiconductor diode | | |
| 2 | BAW100 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW100
Features
For high-speed switching Electrically insulated diodes
Diodes
Unit: mm
A b s o lu te M a x im u m R a tin g s T a = 2 5
P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o  Kexin diode | | |
| 3 | BAW100 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) Silicon Switching Diode Array
For high-speed switching q Electrically insulated diodes
q
BAW 100
Type BAW 100
Marking JSs
Ordering Code (tape and reel) Q62702-A376
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward  Siemens Group diode | | |
| 4 | BAW100G | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 Central Semiconductor diode | | |
| 5 | BAW101 | DUAL SURFACE MOUNT SWITCHING DIODE NEW PRODUCT
Features
• Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2)
BAW101
DUAL SURFACE MOUNT SWITCHING D  Diodes diode | | |
| 6 | BAW101 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW101
Features
Electrically insulated high-voltage medium-speed diodes
Diodes
Unit: mm
A bsolute M axim um R atings T a = 25
Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power Kexin diode | | |
| 7 | BAW101 | High Voltage Double Diode BAW101
High Voltage Double Diode
FEATURES
z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes.
Pb
Lead-free
APPLICATIONS
z General application.
ORDERING INFORMATION
Type No.
Marking
BAW101
AB
SOT-143
Package Code SOT-143
MAXIMUM RATING @  LGE diode | |
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