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Datasheet BAW79D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BAW79D | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) Silicon Switching Diodes
BAW 79 A … BAW 79 D
For high-speed switching q High breakdown voltage q Common cathode
q
Type BAW 79 A BAW 79 B BAW 79 C BAW 79 D
Marking GE GF GG GH
Ordering Code (tape and reel) Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733
Pin Configuration
Package1) SOT-89
Ma |  Siemens Group | diode |
| 2 | BAW79D | Silicon Switching Diodes BAW78.../BAW79...
Silicon Switching Diodes
Switching applications High breakdown voltage
BAW78D
2
BAW79D
2
1
2
3
1
2
3
Type BAW78D BAW79D
Parameter
Package SOT89 SOT89
Configuration single common cathode
Symbol VR VRM IF IFM IFS Ptot Value
Marking GD GH
Unit
Maximum Ratings at TA = |  Infineon Technologies AG | diode |
| 3 | BAW79D | Silicon Switching Diodes BAW78.../BAW79...
Silicon Switching Diodes
Switching applications High breakdown voltage
BAW78D
2
BAW79D
2
1
2
3
1
2
3
Type BAW78D BAW79D
Parameter
Package SOT89 SOT89
Configuration single common cathode
Symbol VR VRM IF IFM IFS Ptot Value
Marking GD GH
Unit
Maximum Ratings at TA = | Infineon Technologies AG | diode |
BAW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BAW100 | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1  Central Semiconductor diode | | |
| 2 | BAW100 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW100
Features
For high-speed switching Electrically insulated diodes
Diodes
Unit: mm
A b s o lu te M a x im u m R a tin g s T a = 2 5
P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o  Kexin diode | | |
| 3 | BAW100 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) Silicon Switching Diode Array
For high-speed switching q Electrically insulated diodes
q
BAW 100
Type BAW 100
Marking JSs
Ordering Code (tape and reel) Q62702-A376
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward Siemens Group diode | | |
| 4 | BAW100G | SILICON SWITCHING DIODES BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 Central Semiconductor diode | | |
| 5 | BAW101 | DUAL SURFACE MOUNT SWITCHING DIODE NEW PRODUCT
Features
• Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2)
BAW101
DUAL SURFACE MOUNT SWITCHING D  Diodes diode | | |
| 6 | BAW101 | Silicon Switching Diode Array SMD Type
Silicon Switching Diode Array BAW101
Features
Electrically insulated high-voltage medium-speed diodes
Diodes
Unit: mm
A bsolute M axim um R atings T a = 25
Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power Kexin diode | | |
| 7 | BAW101 | High Voltage Double Diode BAW101
High Voltage Double Diode
FEATURES
z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes.
Pb
Lead-free
APPLICATIONS
z General application.
ORDERING INFORMATION
Type No.
Marking
BAW101
AB
SOT-143
Package Code SOT-143
MAXIMUM RATING @  LGE diode | |
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