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BAX12 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAX12
기능 Controlled avalanche diode
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BAX12 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAX12
Controlled avalanche diode
Product specification
Supersedes data of April 1996
1996 Sep 17




BAX12 pdf, 반도체, 판매, 대치품
Philips Semiconductors
Controlled avalanche diode
Product specification
BAX12
GRAPHICAL DATA
500
handbook, halfpage
IF
(mA)
400
300
200
100
MBG455
0
0
100
Tamb (oC)
200
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
600
handbook, halfpage
IF
(mA)
400
MBG463
(1) (2)
(3)
200
0
0 1 VF (V) 2
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
102
handbook, full pagewidth
IFSM
(A)
10
MBG702
1
101
1
10
102
103
tp (µs)
104
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
4

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BAX12 전자부품, 판매, 대치품
Philips Semiconductors
Controlled avalanche diode
Product specification
BAX12
handbook, full pagewidth
RS = 50
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50
MGA881
VR
tr
10%
tp
90%
input signal
t
IF
t rr
t
(1)
output signal
Input signal: reverse pulse rise time tr = 0.6 ns; reverse pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Circuit capacitance: C 1 pF (oscilloscope input capacitance + parasitic capacitance).
(1) IR = 3 mA.
Fig.10 Reverse recovery voltage test circuit and waveforms.
1996 Sep 17
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