Datasheet BB145 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BB145	Low-voltage variable capacitance diode DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 Low-voltage variable capacitance diode Product speciﬁcation Supersedes data of 1999 Sep 15 1999 Dec 15 Philips Semiconductors Product speciﬁcation Low-voltage variable capacitance diode FEATURES • Ultra small plastic SMD package • C4: 3 p	Philipss	diode
2	BB145	Low-voltage variable capacitance diode	Leshan Radio Company	diode
3	BB145B	Low-voltage variable capacitance diode DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145B Low-voltage variable capacitance diode Product speciﬁcation 1999 Dec 15 Philips Semiconductors Product speciﬁcation Low-voltage variable capacitance diode FEATURES • Ultra small plastic SMD package • C4: 2.75 pF; ratio: 2.4 • Low serie	Philipss	diode
4	BB145B	Low-voltage variable capacitance diode	Leshan Radio Company	diode
5	BB145B-01	Low-voltage variable capacitance diode DISCRETE SEMICONDUCTORS DATA SHEET BB145B-01 Low-voltage variable capacitance diode Product speciﬁcation Supersedes data of 2002 Nov 18 2004 Mar 29 Philips Semiconductors Product speciﬁcation Low-voltage variable capacitance diode FEATURES • Ultra s	NXP Semiconductors	diode

BB1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BB101C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand	Hitachi	amplifier
2	BB101M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand	Hitachi	amplifier
3	BB102C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing	Hitachi	amplifier
4	BB102M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing	Hitachi	amplifier
5	BB105	Silicon Planar Signal Diodes	Iskra Semic	diode
6	BB105A	(BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/	Tele Fun Ken	diode
7	BB105B	(BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/	Tele Fun Ken	diode

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Número de pieza	Descripción	Fabricantes	PDF
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