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PDF BB304C Data sheet ( Hoja de datos )
| Número de pieza | BB304C | |
| Descripción | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BB304C (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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BB304C
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-606C (Z)
4th. Edition
August 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
(PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
Notes: 1 Marking is “DW–”.
2. BB304C is individual type number of HITACHI BBFET.
1 page  
Maximum Channel Power
Dissipation Curve
200
150
100
50
0 50 100 150 200
Ambient Temperature Ta (¡C)
BB304C
Typical Output Characteristics
25
VG2S = 6 V
V G1= VDS
20
15
10
564687802000kkkkΩΩΩΩ
5 1M Ω
R G = 1.5 M Ω
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain Current vs.
Gate2 to Source Voltage
25
V DS = VG1 = 9 V
20
270 k Ω
330 k Ω
15 390 k Ω
10
470 k Ω
560 k Ω
680 k Ω
5
820 k Ω
1M Ω
R G = 1.5 M Ω
0 1.2 2.4 3.8 4.8 6.0
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate1 Voltage
25
V DS = 9 V
R G = 390 k Ω
20
6V
5V
15
4V
10 3 V
2V
5
VG2S = 1 V
0 2 4 6 8 10
Gate1 Voltage VG1 (V)
5
5 Page 
Package Dimensions
0.3
+ 0.1
— 0.05
3
2.0 –0.2
1.3
0.65 0.65
2
0.3
+ 0.1
— 0.05
4
0.3
+ 0.1
— 0.05
1
0.65 0.6
1.25
0.4
+ 0.1
— 0.05
0.16
+ 0.1
— 0.06
0 ~ 0.1
BB304C
Unit: mm
Hitahi Code CMPAK-4
EIAJ
SC-82AB
JEDEC
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BB304C.PDF ] | |
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