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Número de pieza | BB304M | |
Descripción | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |
Fabricantes | Hitachi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BB304M (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! BB304M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-605C (Z)
4th. Edition
August 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
(PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
Note: 1. Marking is “DW–”.
2. BB304M is individual type number of HITACHI BBFET.
1 page Maximum Channel Power
Dissipation Curve
200
150
100
50
0 50 100 150 200
mbient Temperature Ta (°C)
BB304M
Typical Output Characteristics
25
VG2S = 6 V
V G1= VDS
20
15
10
564687802000kkkkWWWW
5 1M W
R G = 1.5 M W
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain Current vs.
Gate2 to Source Voltage
25
V DS = VG1 = 9 V
20
270 k W
330 k W
15 390 k W
10
470 k W
560 k W
680 k W
5
820 k W
1M W
R G = 1.5 M W
0 1.2 2.4 3.8 4.8 6.0
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate1 Voltage
25
V DS = 9 V
R G = 390 k W
20
6V
5V
15
4V
10 3 V
2V
5
VG2S = 1 V
0 2 4 6 8 10
Gate1 Voltage VG1 (V)
5
5 Page Package Dimensions
0.4
+
–
0.1
0.05
3
2.8
+
–
0.3
0.1
1.9
0.95 0.95
2
0.4
+
–
0.1
0.05
4
0.4
+
–
0.1
0.05
1
0.95 0.85
1.8
0.6
+
–
0.1
0.05
0.16
+ 0.1
– 0.06
0 ~ 0.1
BB304M
Unit: mm
Hitachi Code
EIAJ
JEDEC
MPAK–4
SC–61AA
—
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet BB304M.PDF ] |
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BB304C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | Hitachi |
BB304M | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | Hitachi |
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