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PDF DG200AAK Data sheet ( Hoja de datos )
| Número de pieza | DG200AAK | |
| Descripción | Monolithic Dual SPST CMOS Analog Switch | |
| Fabricantes | TEMICs | |
| Logotipo |  |
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DG200A
Monolithic Dual SPST CMOS Analog Switch
Features
D "15 V Input Signal Range
D 44-V Maximum Supply Ranges
D On-Resistance: 45 W
D TTL and CMOS Compatibility
Benefits
Applications
D Wide Dynamic Range
D Simple Interfacing
D Reduced External Component Count
D Servo Control Switching
D Programmable Gain Amplifiers
D Audio Switching
D Programmable Filters
Description
The DG200A is a dual, single-pole, single-throw analog
switch designed to provide general purpose switching of
analog signals. This device is ideally suited for designs
requiring a wide analog voltage range coupled with low
on-resistance.
Each switch conducts equally well in both directions when
on, and blocks up to 30 V peak-to-peak when off. In the on
condition, this bi-directional switch introduces no offset
voltage of its own.
The DG200A is designed on Siliconix’ improved PLUS-40
CMOS process. An epitaxial layer prevents latchup.
Functional Block Diagram and Pin Configuration
Dual-In-Line
IN2
NC
GND
NC
S2
D2
V–
1
2
3
4
5
6
7
Top View
14 IN1
13 NC
12 V+ Substrate
11 NC
10 S1
9 D1
8 NC
Metal Can
V+ (Substrate and Case)
IN1 10 S1
19
IN2 2
8 D1
GND 3
7 NC
46
S2 5 V–
D2
Top View
Truth Table
Logic
0
1
Switch
ON
OFF
Logic “0” v 0.8 V
Logic “1” w 2.4 V
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70035.
Siliconix
S-52880—Rev. B, 28-Apr-97
1
1 page  
DG200A
Test Circuits
VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform.
+15 V
Logic
Input
3V
0V
Switch
Input
VS
Switch
Output
VO
50%
90%
tr <20 ns
tf <20 ns
tOFF
VS = +5 V
3V
V+
SD
IN
GND
V–
RL
1 kW
VO
CL
35 pF
tON –15 V
RL
Figure 2. Switching Time
VO = VS RL + rDS(on)
+15 V
V+
Rg S
D
VO
DVO
VO
Vg
3V
IN
GND
V–
–15 V
CL
1000 pF
INX ON
OFF ON
DVO = measured voltage error due to charge injection
The charge injection in coulombs is DQ = CL x DVO
Figure 3. Charge Injection
VS
Rg = 50 W
5V
+15 V
C
V+
SD
IN
GND
V– C
VO
RL
–15 V
Off Isolation = 20 log
VS
VO
Figure 4. Off Isolation
Siliconix
S-52880—Rev. B, 28-Apr-97
+15 V
C
VS
Rg = 50 W
0V
NC
0V
V+
S1 D1
IN1
S2 D2
IN2
GND
V– C
50 W
VO
RL
–15 V
XTALK = 20 log
C = RF bypass
VS
VO
Figure 5. Channel-to-Channel Crosstalk
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DG200AAK.PDF ] | |
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