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DG200BA 데이터시트 PDF




Harris Corporation에서 제조한 전자 부품 DG200BA은 전자 산업 및 응용 분야에서
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부품번호 DG200BA 기능
기능 CMOS Dual/Quad SPST Analog Switches
제조업체 Harris Corporation
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DG200BA 데이터시트, 핀배열, 회로
SEMICONDUCTOR
DG200, DG201
December 1993
CMOS Dual/Quad SPST Analog Switches
Features
Description
• Switches Greater than 28VP-P Signals with ±15 Supplies
• Break-Before-Make Switching tOFF 250ns, tON 700ns
Typical
• TTL, DTL, CMOS, PMOS Compatible
• Non-Latching with Supply Turn-Off
• Complete Monolithic Construction
• Industry Standard (DG200, DG201)
The DG200 and DG201 solid state analog gates are
designed using an improved, high voltage CMOS monolithic
technology. They provide ease-of-use and performance
advantages not previously available from solid state
switches. Destructive latch-up of solid state analog gates
has been eliminated by Harris's CMOS technology.
The DG200 and DG201 are completely specification and
pinout compatible with the industry standard devices.
Applications
• Data Acquisition
• Sample and Hold Circuits
• Operational Amplifier Gain Switching Networks
Ordering Information
PART NUMBER
DG200AA
DG200AK
DG200BA
DG200BK
DG200CJ
DG200AA/883B
DG200AK/883B
DG201AK
DG201BK
DG201CJ
DG201AK/883B
TEMPERATURE
-55oC to +125oC
-55oC to +125oC
-25oC to +85oC
-25oC to +85oC
0oC to +70oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-25oC to +85oC
0oC to +70oC
-55oC to +125oC
PACKAGE
10 Pin Metal Can
14 Lead Ceramic DIP
10 Pin Metal Can
14 Lead Ceramic DIP
14 Lead Plastic DIP
10 Pin Metal Can
14 Lead Ceramic DIP
16 Lead Ceramic DIP
16 Lead Ceramic DIP
16 Lead Plastic DIP
16 Lead Ceramic DIP
Pinouts
DG200
(CDIP, PDIP)
TOP VIEW
IN2 1
NC 2
GND 3
NC 4
S2 5
D2 6
V- 7
14 IN1
13 NC
12 V+ (SUBSTRATE)
11 NC
10 S1
9 D1
8 VREF
DG200
(TO-100 METAL CAN)
TOP VIEW
V+
(SUBSTRATE AND CASE)
10
IN1 1
9 S1
IN2 2
8 D1
GND 3
S2 4
7 VREF
5 6 V-
D2
IN1 1
D1 2
S1 3
V- 4
GND 5
S4 6
D4 7
IN4 8
DG201
(CDIP, PDIP)
TOP VIEW
16 IN2
15 D2
14 S2
13 V+(SUBSTRATE)
12 VREF
11 S3
10 D3
9 IN3
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1993
9-13
File Number 3115




DG200BA pdf, 반도체, 판매, 대치품
Specifications DG201
Absolute Maximum Ratings
Thermal Information
V+ to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <36V
V+ to VD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30V
VD to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30V
VD to VS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <28V
VREF to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <33V
VREF to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30V
VREF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <20V
VIN to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <20V
Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30mA
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance
Ceramic DIP Package . . . . . . . . . . . . . . .
Plastic DIP Package . . . . . . . . . . . . . . . .
θJA
80oC/W
145oC/W
θJC
24oC/W
-
Operating Temperature Range
“A” Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
“B” Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25oC to +85oC
“C” Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications (TA = +25oC, V+ = +15V, V- = -15V)
PARAMETER
TEST CONDITIONS
MILITARY
-55oC
+25oC +125oC
COMMERCIAL / INDUSTRIAL
0oC TO
-25oC
+25oC
+70oC TO
+85oC
UNITS
Input Logic Current,
IIN(ON)
VIN = 0.8V (Note 1)
Input Logic Current,
IN(OFF)
VIN = 2.4V (Note 1)
Drain-Source On Resis- IS = 10mA, VANALOG =
tance, rDS(ON)
±10V
Channel-to-Channel
rDS(ON) Match, rDS(ON)
Minimum Analog Signal
Handling Capability,
VANALOG
Switch OFF Leakage
Current, ID(OFF)
VANALOG = -14V to +14V
Switch OFF Leakage
Current, IS(OFF)
VANALOG = -14V to +14V
Switch ON Leakage Cur- VD = VS = -14V to +14V
rent, ID(ON) + IS(ON)
Switch “ON” Time
(Note 2), tON
RL = 1k, VANALOG =
-10V to +10V (Figure 5)
Switch “OFF” Time
(Note 2), tOFF
RL = 1k, VANALOG =
-10V to +10V (Figure 5)
Charge Injection, Q(INJ.) Figure 6
Minimum Off Isolation
Rejection Ratio, OIRR
f = 1MHz, RL = 100,
CL 5pF, (Figure 7)
+Power Supply
Quiescent Current, I+Q
VIN = 0V or VIN = 5V
-Power Supply
Quiescent Current, I-Q
Minimum Channel to
One Channel Off
Channel Cross Coupling
Rejection Ratio, CCRR
10
10
80
-
-
-
-
-
-
-
-
-
2000
2000
-
±1
±1
80
25 (Typ)
±15 (Typ)
±1
±1
±2
1.0
0.5
15 (Typ)
54 (Typ)
1000
1000
54 (Typ)
10
10
125
-
-
100
100
200
-
-
-
-
2000
2000
-
±1 ±1
±1 ±1
100 100
- 30 (Typ)
- ±15 (Typ)
10
10
125
-
-
- ±5 100
- ±5 100
- ±5 200
- 1.0
-
- 0.5
-
- 20 (Typ)
- 50 (Typ)
-
-
2000
1000
2000
2000
1000
2000
- 50 (Typ)
-
µA
µA
V
nA
nA
nA
µs
µs
mV
dB
µA
µA
dB
NOTES:
1. Typical values are for design aid only, not guaranteed and not subject to production testing.
2. All channels are turned off by high “1” logic inputs and all channels are turned on by low “0” inputs; however 0.8V to 2.4V describes the
minimum range for switching properly. Peak input current required for transition is typically -120µA.
9-16

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DG200BA 전자부품, 판매, 대치품
Metallization Topology
DIE DIMENSIONS:
74 x 77 x 14 ± 1mils
METALLIZATION:
Type: Al
Thickness: 10kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2/Si3N4
SiO2 Thickness: 7kÅ ± 1.4kÅ
Si3N4 Thickness: 8kÅ ± 1.2kÅ
WORST CASE CURRENT DENSITY:
1 x 105 A/cm2
Metallization Mask Layout
D1
(9)
DG200
DG200
V- D2
(7) (6)
S1 (10)
V- (SUBSTRATE)* (12)
(5) S2
* Backside of Chip is V+
(14)
IN1
(1)
IN2
(3)
GND
9-19

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