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PDF DG213DJ Data sheet ( Hoja de datos )

Número de pieza DG213DJ
Descripción Quad Complementary CMOS Analog Switch
Fabricantes TEMICs 
Logotipo TEMICs Logotipo



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DG213
Quad Complementary CMOS Analog Switch
Features
Benefits
D "22-V Supply Voltage Rating
D TTL and CMOS Compatible Logic
D Low On-Resistance—rDS(on): 45 W
D Low Leakage—ID(on): 20 pA
D Single Supply Operation Possible
D Extended Temperature Range
D Fast Switching—tON: 85 ns
D Low Charge Injection—Q: 1 pC
D Wide Analog Signal Range
D Simple Logic Interface
D Higher Accuracy
D Minimum Transients
D Reduced Power Consumption
D Low Cost
Applications
D Industrial Instrumentation
D Test Equipment
D Communications Systems
D Computer Peripherals
D Portable Instruments
D Sample-and-Hold Circuits
Description
The versatile DG213 analog switch has two NC and two NO
switches. It can be used in various configurations, including
four single-pole single-throw (SPST), two single-pole
double-throw (SPDT), one “T” switch, one DPDT, etc. This
device is fabricated in a Siliconix’ proprietary high-voltage
silicon gate CMOS process, resulting in lower on-resistance,
lower leakage, higher speed, and lower power consumption.
This analog switch was designed for a wide variety of
general purpose applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. These switches can
handle up to "22 V, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents
latchup.
All switches feature true bi-directional performance in
the on condition, and will block signals to the supply
levels in the off condition.
For additional information, please refer to Application
Note AN208.
Functional Block Diagram and Pin Configuration
DG213
IN1
D1
S1
V–
GND
S4
D4
IN4
1
2
3
4
5
6
7
8
Top View
16 IN2
15 D2
14 S2
13 V+
12 VL
11 S3
10 D3
9 IN3
Logic
0
1
Truth Table
SW1, SW4
SW2, SW3
OFF ON
ON OFF
Logic “0” v 0.8 V
Logic “1” w 2.4 V
Temp Range
–40 to 85_C
Ordering Information
Package
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin TSSOP
Part Number
DG213DJ
DG213DY
DG213DQ
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70662.
Applications information may also be obtained via FaxBack, request document #70606.
Siliconix
S-56461—Rev. C, 29-Dec-97
1

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DG213DJ pdf
Typical Characteristics (Cont’d)
Off Isolation vs. Frequency
120
V+ = +15 V
110 V– = –15 V
100
90
RL = 50 W
80
70
60
50
40
10 k
100 k
1M
f – Frequency (Hz)
10 M
Schematic Diagram (Typical Channel)
V+
VL
Level
Shift/
Drive
INX
GND
V–
Figure 1.
DG213
SX
V–
V+
DX
Test Circuits
+15 V
VS = +2 V
3V
V+
SD
IN
GND
V–
VO
RL
300 kW
CL
35 pF
–15 V
VO = VS
RL
RL + rDS(on)
Logic
Input
3V
0V
Switch
Output
VO
Siliconix
S-56461—Rev. C, 29-Dec-97
Figure 2. Switching Time
50%
90%
tr <20 ns
tf <20 ns
tOFF
tON
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