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PDF DG300B Data sheet ( Hoja de datos )

Número de pieza DG300B
Descripción CMOS Analog Switches
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! DG300B Hoja de datos, Descripción, Manual

DG300B/301B/302B/303B
Vishay Siliconix
CMOS Analog Switches
FEATURES
D Analog Signal Range: "15 V
D Fast Switching—tON: 150 ns
D Low On-Resistance—rDS(on): 30 W
D Single Supply Operation
D Latch-up Proof
D CMOS Compatible
BENEFITS
APPLICATIONS
D Full Rail-to-Rail Analog Signal Range D Low Level Switching Circuits
D Low Signal Error
D Programmable Gain Amplifiers
D Low Power Dissipation
D Portable and Battery Powered Systems
DESCRIPTION
The DG300B-DG303B family of monolithic CMOS switches
feature three switch configuration options (SPST, SPDT, and
DPST) for precision applications in communications,
instrumentation and process control, where low leakage
switching combined with low power consumption are required.
Designed on the Vishay Siliconix PLUS-40 CMOS process,
these switches are latch-up proof, and are designed to block
up to 30 V peak-to-peak when off. An epitaxial layer prevents
latchup.
In the on condition the switches conduct equally well in both
directions (with no offset voltage) and minimize error
conditions with their low on-resistance.
Featuring low power consumption (3.5 mW typ) these
switches are ideal for battery powered applications, without
sacrificing switching speed. Designed for break-before-make
switching action, these devices are CMOS and quasi TTL
compatible. Single supply operation is allowed by connecting
the V– rail to 0 V.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NC 1
D1 2
NC 3
S1 4
NC 5
IN1 6
GND 7
DG300B
Plastic DIP
14 V+
13 D2
12 NC
11 S2
10 NC
9 IN2
8 V–
Top View
TRUTH TABLE
Logic
Switch
0 OFF
1 ON
Logic “0” v 0.8 V
Logic “1” w 4 V
Document Number: 71402
S-02968—Rev. A, 22-Jan-01
www.vishay.com
1

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DG300B pdf
DG300B/301B/302B/303B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply
90
TA = 25_C
70 "5 V
60
50
rDS(on) vs. VD and Temperature
V+ = 15 V
V= 15 V
50
30
10
25
"8 V
"10 V
"12 V
"15 V
"20 V
15 5 5 15
VD Drain Voltage (V)
25
rDS(on) vs. VD and Power Supply Voltage
100
7.5 V
V= 0 V
TA = 25_C
80
10 V
60
15 V
40 20 V
20
0
5 10 15
VD Drain Voltage (V)
20
Charge Injection vs. Analog Voltage
50
V+ = 15 V
40 V= 15 V
CL = 1 nF
40
TA = 125_C
30
TA = 25_C
20
TA = 55_C
10
15
10
5
0
5 10 15
VD Drain Voltage (V)
Switching Time and Break-Before-Make Time
vs. Positive Supply Voltage
500
V= 15 V
TA = 25_C
VINH = 4 V
400 VINL = 0 V
300 tOFF
200 tON
100 tOPEN
DG301B/303B Only
0
0 5 10
V+ Positive Supply (V)
Input Switching Threshold
vs. Positive Supply Voltage
5
V= 15 V
TA = 25_C
4
15
30 3
20
10
0
15
10 5 0 5
VS Source Voltage (V)
10
Document Number: 71402
S-02968Rev. A, 22-Jan-01
15
2
1
0 5 10 15
V+ Positive Supply (V)
www.vishay.com
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