|
|
PDF DG306AE25 Data sheet ( Hoja de datos )
| Número de pieza | DG306AE25 | |
| Descripción | Gate Turn-off Thyristor | |
| Fabricantes | Dynex | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DG306AE25 (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
|
No Preview Available !
Replaces March 1998 version, DS4089 - 3.2
DG306AE25
DG306AE25
Gate Turn-off Thyristor
DS4099-4.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC)
s Uninterruptable Power Supplies
s High Voltage Converters
s Choppers
s Welding
s Induction Heating
s DC/DC Converters
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
600A
2500V
225A
1000V/µs
300A/µs
FEATURES
s Double Side Cooling
s High Reliability In Service
s High Voltage Capability
s Fault Protection Without Fuses
s High Surge Current Capability
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
VOLTAGE RATINGS
Outline type code: E.
See Package Details for further information.
Type Number
DG306AE25
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
V
DRM
V
V
RRM
V
2500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current VD = 67%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 1.0µF 600
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
225
RMS on-state current
T = 80oC. Double side cooled. Half sine 50Hz.
HS
350
Units
A
A
A
1/19
1 page  
1000
750
Conditions:
Tj = 125˚C,
VDM = 1500V
dIGQ/dt = 15A/µs
DG306AE25
500
250
0
0.075
0.5 1.0 1.5
Snubber capacitance Cs - (µF)
Fig.3 Dependence of ITCM on Cs
2.0
dc
0.050
0.025
0
0.001
0.01
0.1
Time - s
1.0
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
12.5
10.0
7.5
5.0
2.5
0
0.0001
0.001
0.01
0.1
Pulse duration - (s)
Fig.5 Surge (non-repetitive) on-state current vs time
1.0
5/19
5 Page 
DG306AE25
1000
900
800
Conditions:
Tj = 125˚C
Cs = 1.0µF
dIGQ/dt = 15A/µs
700
600
500
400
300
200
100
0
100 200 300 400 500
On-state current - (A)
Fig.17 Turn-off energy vs on-state current
VDM = 2000V
VDM = 1500V
VDM = 1000V
600
1100
1000
VDM = 2000V
900
VDM = 1500V
800
700 Conditions: VDM = 1000V
IT = 600A
Tj = 125˚C
Cs = 1.0µF
600
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet DG306AE25.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DG306AE25 | Gate Turn-off Thyristor | Dynex |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |