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PDF DG406BP25 Data sheet ( Hoja de datos )

Número de pieza DG406BP25
Descripción Gate Turn-off Thyristor
Fabricantes Dynex 
Logotipo Dynex Logotipo



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No Preview Available ! DG406BP25 Hoja de datos, Descripción, Manual

Replaces March 1998 version, DS4090-2.3
DG406BP25
DG406BP25
Gate Turn-off Thyristor
DS4090-3.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC).
s Uninterruptable Power Supplies
s High Voltage Converters.
s Choppers.
s Welding.
s Induction Heating.
s DC/DC Converters.
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
1000A
2500V
400A
1000V/µs
300A/µs
FEATURES
s Double Side Cooling.
s High Reliability In Service.
s High Voltage Capability.
s Fault Protection Without Fuses.
s High Surge Current Capability.
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.
VOLTAGE RATINGS
Outline type code: P.
See Package Details for further information.
Type Number
DG406BP25
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
V
DRM
V
V
RRM
V
2500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF 1000
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
400
RMS on-state current
T = 80oC. Double side cooled. Half sine 50Hz.
HS
630
Units
A
A
A
1/19

1 page




DG406BP25 pdf
DG406BP25
0.05
0.04 dc
0.03
0.02
0.01
0
0.001
0.01
0.1 1.0
Time - (s)
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
20
100
15
10
5
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
Fig.5 Surge (non-repetitive) on-state current vs time
1.0
5/19

5 Page





DG406BP25 arduino
2500
2000
Conditions:
Tj = 125˚C,
CS = 1.0µF,
dIGQ/dt = 30A/µs
1500
DG406BP25
VDRM
0.75x VDRM
1000
500
0.5x VDRM
0
0
250
500
750
1000
1250
1500
On-state current IT - (A)
FIG 17 TFUigR.1N7 TOuFrFn-oEfNf eEnReGrgYy vs oOnN-stSaTteAcTuErrCenUtRRENT
2500
2000
Conditions:
Tj = 125˚C,
CS = 1.0µF,
IT = 1000A
1500
VDRM
0.75x VDRM
1000
0.5x VDRM
500
10 20 30 40 50 60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.1F8IGTur1n8-oTfUf eRnNergOyFlFosEsNvEsRraGteYoLfOrisSeSof reRveArTseEgOaFteRcuISrrEenOtF
11/19

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