Datasheet.kr   

DG412 데이터시트 PDF




Intersil Corporation에서 제조한 전자 부품 DG412은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 DG412 자료 제공

부품번호 DG412 기능
기능 Monolithic Quad SPST / CMOS Analog Switches
제조업체 Intersil Corporation
로고 Intersil Corporation 로고


DG412 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 13 페이지수

미리보기를 사용할 수 없습니다

DG412 데이터시트, 핀배열, 회로
®
Data Sheet
DG411, DG412, DG413
June 20, 2007
FN3282.13
Monolithic Quad SPST, CMOS Analog
Switches
The DG411 series monolithic CMOS analog switches are
drop-in replacements for the popular DG211 and DG212
series devices. They include four independent single pole
throw (SPST) analog switches, and TTL and CMOS
compatible digital inputs.
These switches feature lower analog ON-resistance (<35Ω)
and faster switch time (tON<175ns) compared to the DG211
or DG212. Charge injection has been reduced, simplifying
sample and hold applications.
The improvements in the DG411 series are made possible
by using a high voltage silicon-gate process. An epitaxial
layer prevents the latch-up associated with older CMOS
technologies. The 44V maximum voltage range permits
controlling 40VP-P signals. Power supplies may be
single-ended from +5V to 44V, or split from ±5V to ±20V.
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON-resistance variation with analog
signals is quite low over a ±15V analog input range. The
switches in the DG411 and DG412 are identical, differing only
in the polarity of the selection logic. Two of the switches in the
DG413 (#2 and #3) use the logic of the DG211 and DG411
(i.e., a logic “0” turns the switch ON) and the other two
switches use DG212 and DG412 positive logic. This permits
independent control of turn-on and turn-off times for SPDT
configurations, permitting “break-before-make” or “make-
before-break” operation with a minimum of external logic.
Features
• ON-Resistance (Max). . . . . . . . . . . . . . . . . . . . . . . . . 35Ω
• Low Power Consumption (PD) . . . . . . . . . . . . . . . . . . <35µW
• Fast Switching Action
- tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175ns
- tOFF (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145ns
• Low Charge Injection
• Upgrade from DG211, DG212
• TTL, CMOS Compatible
• Single or Split Supply Operation
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Audio Switching
• Battery Operated Systems
• Data Acquisition
• Hi-Rel Systems
• Sample and Hold Circuits
• Communication Systems
• Automatic Test Equipment
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1993, 1994, 1997, 1999, 2002, 2004-2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.




DG412 pdf, 반도체, 판매, 대치품
DG411, DG412, DG413
Absolute Maximum Ratings
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
VL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) to (V+) +0.3V
Digital Inputs, VS, VD (Note 1). . . . . (V-) -2V to (V+) + 2V or 30mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA
Operating Conditions
Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V (Max)
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max)
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min)
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20ns
Thermal Information
Thermal Resistance (Typical, Note 2)
θJA (°C/W)
PDIP Package* . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110
TSSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
Maximum Junction Temperature (Plastic Packages). . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
(SOIC and TSSOP - Lead Tips Only)
*Pb-free PDIPs can be used for through hole wave solder
processing only. They are not intended for use in Reflow solder
processing applications.
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications Test Conditions: V+ = +15V, V- = -15V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified.
PARAMETER
TEST CONDITIONS
TEMP
MIN
(°C) (Note 4)
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
RL = 300Ω, CL = 35pF, VS = ±10V (Figure 1)
25 -
85 -
Turn-OFF Time, tOFF
25 -
85 -
Break-Before-Make Time Delay
DG413 Only, RL = 300Ω, CL = 35pF (Figure 2)
25
-
Charge Injection, Q (Figure 3)
CL = 10nF, VG = 0V, RG = 0Ω
25 -
OFF Isolation (Figure 5)
RL = 50Ω, CL = 5pF, f = 1MHz
25 -
Crosstalk (Channel-to-Channel),
(Figure 4)
25 -
Source OFF Capacitance, CS(OFF) f = 1MHz (Figure 6)
Drain OFF Capacitance, CD(OFF)
Channel ON Capacitance,
CD(ON) + CS(ON)
DIGITAL INPUT CHARACTERISTICS
25 -
25 -
25 -
Input Current VIN Low, IIL
VIN Under Test = 0.8V, All Others = 2.4V
Input Current VIN High, IIH
VIN Under Test = 2.4V, All Others = 0.8V
ANALOG SWITCH CHARACTERISTICS
Full -0.5
Full -0.5
Analog Signal Range, VANALOG
Drain-Source ON Resistance,
rDS(ON)
IS = 10mA
IS = 10mA, VD = ±8.5V, V+ = 13.5V, V- = -13.5V
Full
25
Full
-15
-
-
TYP
(Note 5)
110
-
100
-
25
5
68
-85
9
9
35
0.005
0.005
-
25
-
MAX
(Note 4) UNITS
175 ns
220 ns
145 ns
160 ns
- ns
- pC
- dB
- dB
- pF
- pF
- pF
0.5 μA
0.5 μA
15 V
35 Ω
45 Ω
4 FN3282.13
June 20, 2007

4페이지










DG412 전자부품, 판매, 대치품
DG411, DG412, DG413
Test Circuits and Waveforms (Continued)
V+
RG D1
VO
SWITCH
OUTPUT
ΔVO
INX
OFF
ON
OFF
VG
CL
GND
V-
VIN = 3V
FIGURE 3A. TEST CIRCUIT
OFF
INX
ON
Q = ΔVO x CL
OFF
NOTE: INX dependent on switch configuration, input polarity
determined by sense of switch.
FIGURE 3B. MEASUREMENT POINTS
FIGURE 3. CHARGE INJECTION
+15V
C V+
SIGNAL
GENERATOR 0dBm
VS
VD
50Ω
0V, 2.4V
ANALYZER
RL
IN1 IN2 0V, 2.4V
VD NC
V-
GND
-15V
C
FIGURE 4. CROSSTALK TEST CIRCUIT
+15V
C V+
SIGNAL
GENERATOR 0dBm
VS
ANALYZER
RL
INX 0V, 2.4V
VD
GND V-
-15V
C
FIGURE 5. OFF ISOLATION TEST CIRCUIT
+15V
C V+
VS
IMPEDANCE
ANALYZER
f = 1MHz
INX 0V, 2.4V
VD
GND
V-
-15V
C
FIGURE 6. SOURCE/DRAIN CAPACITANCES TEST CIRCUIT
7 FN3282.13
June 20, 2007

7페이지


구       성 총 13 페이지수
다운로드[ DG412.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
DG4102

Function/Arbitrary Waveform Generator Guide Manual

RIGOL
RIGOL
DG411

Monolithic Quad SPST / CMOS Analog Switches

Intersil
Intersil

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵