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부품번호 | DG419BDQ 기능 |
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기능 | Precision CMOS Analog Switches | ||
제조업체 | Vishay Siliconix | ||
로고 | |||
전체 9 페이지수
New Product
DG417B/418B/419B
Vishay Siliconix
Precision CMOS Analog Switches
FEATURES
D "15-V Analog Signal Range
D On-Resistance—rDS(on): 15 W
D Fast Switching Action—tON: 100 ns
D TTL and CMOS Compatible
D MSOP-8 and SOIC-8 Packaging
BENEFITS
D Wide Dynamic Range
D Low Signal Errors and Distortion
D Break-Before-Make Switching Action
D Simple Interfacing
D Reduced Board Space
D Improved Reliability
APPLICATIONS
D Precision Test Equipment
D Precision Instrumentation
D Battery Powered Systems
D Sample-and-Hold Circuits
D Military Radios
D Guidance and Control Systems
D Hard Disk Drives
DESCRIPTION
The DG417B/418B/419B monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the DG417B
series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
high voltage silicon gate (HVSG) process. Break-before-make
is guaranteed for the DG419B, which is an SPDT
configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay Siliconix’s
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B
Dual-In-Line, SOIC-8 and MSOP-8
S1
NC 2
GND 3
V+ 4
8D
7 V-
6 IN
5 VL
Top View
DG419B
Dual-In-Line, SOIC-8 and MSOP-8
D1
S1 2
GND 3
V+ 4
Top View
8 S2
7 V-
6 IN
5 VL
TRUTH TABLE
Logic
DG417B DG418B
0 ON OFF
1
OFF
ON
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V
TRUTH TABLEĊDG419B
Logic
SW1
SW2
0 ON OFF
1
OFF
ON
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
www.vishay.com
1
DG417B/418B/419B
Vishay Siliconix
New Product
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Symbol
V+ = 12 V, V - = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
IS = - 10 mA, VD = 3.8 V
V+ = 10.8 V
Dynamic Characteristics
Tempb
Full
Room
Full
Typc
26
A Suffix
D Suffix
- 55 to 125_C - 40 to 85_C
Mind Maxd Mind Maxd Unit
0 12 0 12 V
35
52
35
45
W
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Transition Time
Charge Injection
Power Supplies
tON
tOFF
tD
tRANS
Q
RL = 300 W, CL = 35 pF, VS = 8 V
See Switching Time Test Circuit
RL = 300 W, CL = 35 pF
DG419B
RL = 300 W, CL = 35 pF
VS1 = 0 V, 8 V, VS2 = 8 V, 0 V
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
Room
Full
Room
Full
Room
Room
Full
Room
100
38
62
95
3
125 125
155 143
66 66
73 69
ns
25 25
119 119
153 141
pC
Positive Supply
Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I-
IL
IGND
V+ = 13.2 V, VL = 5.25 V
VIN = 0 or 5 V
Room
Full
0.001
1
5
1
5
Room
- 0.001
-1
-5
-1
-5
Room
0.001
1
5
mA
1
5
Room
- 0.001
-1
-5
-1
-5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
www.vishay.com
4
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
4페이지 New Product
DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
VO is the steady state output with the switch on.
"10 V
+5 V
VL
S
IN
GND
+15 V
V+
D
V-
- 15 V
RL
300 W
VO
CL
35 pF
Logic
Input
3V
0V
50%
Switch
VS
Input
VO 90%
Switch
Output
0V
tON
tr <5 ns
tf <5 ns
tOFF
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
Note: Logic input waveform is inverted for switches that have the
opposite logic sense.
FIGURE 2. Switching Time (DG417B/418B)
+5 V
VL
S1
VS1
S2
VS2
IN
GND
+15 V
V+
D
V-
- 15 V
Logic
Input
3V
0V
VO
RL
300 W
CL
35 pF
VS1 = VS2
VO
Switch
Output
0V
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make (DG419B)
90%
tD
tr <5 ns
tf <5 ns
tD
+5 V
+15 V
VL
VS1 S1
VS2 S2
IN
GND
V+
D
V-
RL
300 W
VO
CL
35 pF
Logic
Input
3V
0V
VS1
V01
Switch
Output
- 15 V
VS2
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
FIGURE 4. Transition Time (DG419B)
50%
tTRANS
V02
tr <5 ns
tf <5 ns
tTRANS
90%
10%
Document Number: 72107
S-31538—Rev. B, 11-Aug-03
www.vishay.com
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DG419BDJ | Precision CMOS Analog Switches | Vishay Siliconix |
DG419BDQ | Precision CMOS Analog Switches | Vishay Siliconix |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |