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DG425DN 데이터시트 PDF




Maxim Integrated에서 제조한 전자 부품 DG425DN은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 DG425DN 기능
기능 Improved Low-Power / CMOS Analog Switches with Latches
제조업체 Maxim Integrated
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DG425DN 데이터시트, 핀배열, 회로
19-0137; Rev 1; 3/94
Improved Low-Power,
CMOS Analog Switches with Latches
_______________General Description
Maxim’s redesigned DG421/DG423/DG425 monolithic
analog switches now feature guaranteed on-resistance
matching (3max) between switches and on-resistance
flatness over the signal range (4max). These low on-
resistance switches (20typ) conduct equally well in both
directions. They guarantee a low charge injection of 15pC
maximum and an ESD tolerance of 2000V minimum per
Method 3015.7. Off leakage current over temperature has
also been reduced (less than 5nA at +85°C).
The DG421/DG423/DG425 are precision, dual CMOS
switches with latchable logic inputs that simplify inter-
facing with microprocessors (µPs). The single-pole/single-
throw DG421 and double-pole/single-throw DG425 are
normally open dual switches. The dual, single-
pole/double-throw DG423 has two normally open and
two normally closed switches. Fast switching times
(175ns for tON and 145ns for tOFF) and low power
consumption (35µW max) make these parts ideal for
battery-powered applications requiring µP-compatible
switches. Operation is from a single +10V to +30V supply,
or bipolar ±4.5V to ±20V supplies. Fabricated with the
same 44V silicon-gate process, these switches have
rail-to-rail signal handling capabilities.
_______________________Applications
Sample-and-Hold Circuits
Fax Machines
Battery-Operated Systems
Guidance and Control Systems
Audio Signal Routing
Modems
Test Equipment
PBX, PABX
Military Radios
Communication Systems
__Functional Diagrams/Truth Tables
______________________New Features
o Plug-In Upgrades for Industry-Standard
DG421/DG423/DG425
o Improved r(DS)ON Match Between Channels (3max)
o Guaranteed rFLAT(ON) Over Signal Range (4max)
o Improved Charge Injection (15pC max)
o Improved Off Leakage Current Over Temperature
(<5nA at +85°C)
o Withstands Electrostatic Discharge (2000V min)
per Method 3015.7
__________________Existing Features
o Low rDS(ON) (35max)
o Single-Supply Operation +10V to +30V
Bipolar-Supply Operation ±4.5V to ±20V
o Low Power Consumption (35µW max)
o Rail-to-Rail Signal Handling Capability
o TTL/CMOS-Logic Compatible
______________Ordering Information
PART
TEMP. RANGE
PIN-PACKAGE
DG421CJ
0°C to +70°C
16 Plastic DIP
DG421CY
0°C to +70°C
16 SO
DG421C/D
0°C to +70°C
Dice*
DG421DJ
-40°C to +85°C
16 Plastic DIP
DG421DY
-40°C to +85°C
16 SO
DG421DK
-40°C to +85°C
16 CERDIP
DG421AK
-55°C to +125°C
16 CERDIP**
Ordering Information continued at end of data sheet.
* Contact factory for dice specifications.
**Contact factory for availability and processing to MIL-STD-883B.
_________________Pin Configurations
S1 D1
WR
IN1 CK
DQ
R
IN2 CK
DQ
RS R
S2
DG421
D2
TWO SPST SWITCHES
PER PACKAGE
DG421 TRUTH TABLE
WR RS IN SWITCH
0
0 11
Off
On
LOGIC "O" 0.8V
LOGIC "1" 2.4V
SWITCHES SHOWN FOR
LOGIC "1" INPUT
Functional Diagrams/Truth Tables continued at end of data sheet.
TOP VIEW
D1 1
WR 2
N.C. 3
N.C. 4
N.C. 5
N.C. 6
RS 7
D2 8
DG421
16 S1
15 IN1
14 V-
13 GND
12 VL
11 V+
10 IN2
9 S2
N.C. = No Internal Connection
DIP
Pin Configurations continued at end of data sheet.
________________________________________________________________ Maxim Integrated Products 1
Call toll free 1-800-998-8800 for free samples or literature.




DG425DN pdf, 반도체, 판매, 대치품
Improved Low-Power,
CMOS Analog Switches with Latches
__________________________________________Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
ON-RESISTANCE vs. VD
(DUAL-SUPPLIES)
55
A: V+ = 5V, V- = -5V
50 B: V+ = 10V, V- = -10V
45 C: V+ = 15V, V- = -15V
D: V+ = 20V, V- = -20V
40
A
35
30
B
25
20
15
10
5
-20
-10 0
VD (V)
10
C
D
20
ON-RESISTANCE vs. VD AND
TEMPERATURE (SINGLE SUPPLY)
70
60
TA = +125°C
50
TA = +85°C
40 TA = +25°C
30
ON-RESISTANCE vs. VD AND
TEMPERATURE (DUAL SUPPLIES)
35
30 TA = +125°C
TA = +85°C
25 TA = +25°C
20
15 TA = -55°C
10
V+ = 15V, V- = -15V
5
-20
-10 0
VD (V)
10
OFF LEAKAGE CURRENTS vs.
TEMPERATURE
100
V+ = 16.5V
10
V- = -16.5V
VD = ±15V
VS = ±15V
1
20
0.1
0.01
ON-RESISTANCE vs. VD
(SINGLE SUPPLY)
140
V- = 0V
120
100
V+ = 5V
80
60
40
20
0
V+ = 10V
V+ = 15V
5 10
VD (V)
V+ = 20V
15 20
ON LEAKAGE CURRENTS vs.
TEMPERATURE
100
V+ = 16.5V
10
V- = -16.5V
VD = ±15V
VS = ±15V
1
0.1
0.01
20
V+ = 12V, V- = 0V
10
0
5 10
VD (V)
15
0.001
0.0001
20 -75
CHARGE INJECTION vs.
ANALOG VOLTAGE
60
40
20
0
-20
-40
V+ = 15V, V- = -15V
-60
-20
-10 0
VD (V)
10
20
0.001
25
TEMPERATURE (°C)
100
10
0.0001
125 -75
25
TEMPERATURE (°C)
SUPPLY CURRENT vs.
TEMPERATURE
1
0.1
0.01
0.001
I+ at V+ = 16.5V
I- at V- = -16.5V
IL at VL = 5V
0.0001
-75
25
TEMPERATURE (°C)
125
125
4 _______________________________________________________________________________________

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DG425DN 전자부품, 판매, 대치품
Improved Low-Power,
CMOS Analog Switches with Latches
_________________________________Timing Diagrams/Test Circuits (continued)
LOGIC
INPUT
3V
0V
SWITCH
OUTPUT 1 0V
50%
VOUT1
0.9 x VOUT
VOUT2
SWITCH
OUTPUT 2 0V
0.9 x VOUT
tD
tD
Figure 4. DG423 Break-Before-Make Interval
VOUT
IN 0FF
0N
+5V +15V
VD = 10V
VD = 10V
LOGIC
INPUT
D VL RS
D
IN
WR
GND
V+
S
S
RL2
300
V-
-15V
CL INCLUDES FIXTURE AND STRAY CAPACITANCE.
DG423
VOUT2
RL1
CL2 300
35pF
RL = 1000
CL = 35pF
VOUT1
CL1
35pF
VOUT
0FF
+5V
RS VL
Rg S
+15V
V+
D
Vg
GND WR IN V-
DG421
DG423
DG425
VOUT
CL
10nF
Q = VOUT x CL
IN DEPENDENT ON SWITCH CONFIGURATION.
INPUT POLARITY DETERMINED BY SENSE OF SWITCH.
Figure 5. Charge Injection
-15V
VIN = 3V
10nF +15V
SIGNAL GENERATOR
VS
D V+
+5V
RS VL
IN
NETWORK
ANALYZER
VD
RL
S
GND
WR
V-
-15V 10nF
0V or 2.4V
DG421
DG423
DG425
Figure 6 . Off-Isolation Rejection Ratio
_______________________________________________________________________________________ 7

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