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PDF DG442 Data sheet ( Hoja de datos )

Número de pieza DG442
Descripción Monolithic / Quad SPST / CMOS Analog Switches
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®
Data Sheet
DG441, DG442
November 20, 2006
FN3281.10
Monolithic, Quad SPST, CMOS Analog
Switches
The DG441 and DG442 monolithic CMOS analog switches
are drop-in replacements for the popular DG201A and
DG202 series devices. They include four independent single
pole single throw (SPST) analog switches, TTL and CMOS
compatible digital inputs, and a voltage reference for logic
thresholds.
These switches feature lower analog ON resistance (<85Ω)
and faster switch time (tON <250ns) compared to the
DG201A and DG202. Charge injection has been reduced,
simplifying sample and hold applications.
The improvements in the DG441 series are made possible
by using a high voltage silicon-gate process. An epitaxial
layer prevents the latch-up associated with older CMOS
technologies. The 44V maximum voltage range permits
controlling 40VP-P signals. Power supplies may be single
ended from +5V to +34V, symmetrical supplies from ±5V to
±22V or asymmetrical supplies limited to a maximum
differential voltage of 44V with a V+ max of 34V or a V- max
of -25V.
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with
analog signals is quite low over a ±5V analog input range.
The switches in the DG441 and DG442 are identical,
differing only in the polarity of the selection logic.
Pinout
DG441, DG442
(16 LD PDIP, SOIC, TSSOP)
TOP VIEW
IN1 1
D1 2
S1 3
V- 4
GND 5
S4 6
D4 7
IN4 8
16 IN2
15 D2
14 S2
13 V+
12 NC
11 S3
10 D3
9 IN3
Features
• ON Resistance (Max) . . . . . . . . . . . . . . . . . . . . . . . . . 85Ω
• Low Power Consumption (PD) . . . . . . . . . . . . . . . <1.6mW
• Fast Switching Action
- tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns
- tOFF (Max, DG441). . . . . . . . . . . . . . . . . . . . . . . . 120ns
• Low Charge Injection
• Upgrade from DG201A, DG202
• TTL, CMOS Compatible
• Single or Split Supply Operation
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Audio Switching
• Battery Operated Systems
• Data Acquisition
• Hi-Rel Systems
• Sample and Hold Circuits
• Communication Systems
• Automatic Test Equipment
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002-2006. All Rights Reserved

1 page




DG442 pdf
DG441, DG442
Electrical Specifications (Dual Supply) Test Conditions: V+ = +15V, V- = -15V, VIN = 2.4V, 0.8V, VANALOG = VS, VD,
Unless Otherwise Specified (Continued)
PARAMETER
TEST CONDITIONS
TEMP
(°C)
(NOTE 3)
MIN TYP MAX
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
Negative Supply Current, I-
V+ = 16.5V, V- = -16.5V, VIN = 0V or 5V
Full -
15 100
+25
-1 -0.0001
-
Full -5
-
-
Ground Current, IGND
Full -100
-15
-
Electrical Specifications
PARAMETER
(Single Supply) Test Conditions: V+ = 12V, V- = 0V, VIN = 2.4V, 0.8V, Unless Otherwise Specified
TEST CONDITIONS
TEMP
(°C)
(NOTE 3)
MIN TYP MAX
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
RL = 1kΩ, CL = 35pF, VS = 8V, (Figure 1)
Turn-OFF Time, tOFF
Charge Injection, Q (Figure 2)
CL = 1nF, VG = 6V, RG = 0Ω
ANALOG SWITCH CHARACTERISTICS
+25 -
+25 -
+25 -
300 450
60 200
2-
Analog Signal Range, VANALOG
Drain-Source ON Resistance,
rDS(ON)
IS = 10mA, VD = 3V, 8V V+ = 10.8V
Full 0
+25 -
Full -
- 12
100 160
- 200
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
Negative Supply Current, I-
V+ = 13.2V, V- = 0V, VIN = 0V or 5V
Full -
15 100
+25
-1 -0.0001
-
Full -100 -0.0001
-
Ground Current, IGND
NOTES:
3. Typical values are for DESIGN AID ONLY, not guaranteed nor production tested.
Full -100
-15
-
UNITS
μA
μA
μA
μA
UNITS
ns
ns
pC
V
Ω
Ω
μA
μA
μA
μA
5 FN3281.10
November 20, 2006

5 Page





DG442 arduino
Die Characteristics
DIE DIMENSIONS:
2160μm x 1760μm x 485μm
METALLIZATION:
Type: SiAl
Thickness: 12kÅ ±1kÅ
Metallization Mask Layout
D1
(2)
S1 (3)
DG441, DG442
PASSIVATION:
Type: Nitride
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
DG441, DG442
IN1 IN2
(1) (16)
(15) D2
(14) S2
V- (4)
GND (5)
(13) V+ SUBSTRATE
(12) NC
S4 (6)
(11) S3
(7) (8)
D4 IN4
(9) (10)
IN3 D3
11 FN3281.10
November 20, 2006

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