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PDF DG758BX45 Data sheet ( Hoja de datos )
| Número de pieza | DG758BX45 | |
| Descripción | Gate Turn-off Thyristor | |
| Fabricantes | Dynex | |
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Replaces March 1998 version, DS4095-5.3
DG758BX45
DG758BX45
Gate Turn-off Thyristor
DS4095-6.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC).
s Uninterruptable Power Supplies
s High Voltage Converters.
s Choppers.
s Welding.
s Induction Heating.
s DC/DC Converters.
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
3000A
4500V
870A
1000V/µs
300A/µs
FEATURES
s Double Side Cooling.
s High Reliability In Service.
s High Voltage Capability.
s Fault Protection Without Fuses.
s High Surge Current Capability.
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.
VOLTAGE RATINGS
Outline type code: X.
See Package Details for further information.
Type Number
DG758BX45
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
V
VRRM
V
4500
16
Conditions
Tvj = 125oC, IDM = 100mA,
I = 50mA
RRM
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 6µF 3000
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
870
RMS on-state current
T = 80oC. Double side cooled. Half sine 50Hz.
HS
1365
Units
A
A
A
1/19
1 page  
DG758BX45
0.020
3000
2500
2000
1500
1000
500
0
0
Conditions:
Tj = 125˚C,
VDM = 2000V
dIGQ/dt = 40A/µs
1.0 2.0 3.0 4.0 5.0 6.0
Snubber capacitance Cs - (µF)
Fig.3 Maximum dependence of ITCM on CS
0.015
0.010
dc
0.005
0
0.001
0.01 0.1
Time - s
1.0
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
40
30
20
10
0
0.0001
0.001
0.01
0.1
Pulse duration - (ms)
1.0
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
5 Page 
DG758BX45
7.0
Conditions:
6.0
Tj = 125˚C
Cs = 6µF
dIGQ/dt = 40A/µs
5.0
VDM = 3000V
VDM = 2000V
4.0 VDM = 1000V
3.0
2.0
1.0
0
0
500
1000
1500
2000
2500
3000
On-state current - (A)
Fig.17 Turn-off energy vs on-state current
7.0
Conditions:
IT = 3000A
Tj = 125˚C
Cs = 6µF
6.0
VDM = 3000V
VDM = 2000V
5.0
4.0 VDM = 1000V
3.0
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet DG758BX45.PDF ] | |
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